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The domain wall nucleation and motion processes in Permalloy nanowires with a thickness gradient along the nanowire axis have been studied. Nanowires with widths, w = 250 nm to 3 um and a base thickness of t = 10 nm were fabricated by electron-beam lithography. The magnetization hysteresis loops measured on individual nanowires are compared to corresponding nanowires without a thickness gradient. The Hc vs. t/w curves of wires with and without a thickness gradient are discussed and compared to micromagnetic simulations. We find a metastability regime at values of w, where a transformation from transverse to vortex domain wall type is expected.
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Using Lorentz transmission electron microscopy we investigate the behavior of domain walls pinned at non-topographic defects in Cr(3 nm)/Permalloy(10 nm)/Cr(5 nm) nanowires of width 500 nm. The pinning sites consist of linear defects where magnetic properties are modified by a Ga ion probe with diameter ~ 10 nm using a focused ion beam microscope. We study the detailed change of the modified region (which is on the scale of the focused ion spot) using electron energy loss spectroscopy and differential phase contrast imaging on an aberration (Cs) corrected scanning transmission electron microscope. The signal variation observed indicates that the region modified by the irradiation corresponds to ~ 40-50 nm despite the ion probe size of only 10 nm. Employing the Fresnel mode of Lorentz transmission electron microscopy, we show that it is possible to control the domain wall structure and its depinning strength not only via the irradiation dose but also the line orientation.
Using magnetic force microscopy and micromagnetic simulations, we studied the effect of Oersted magnetic fields on the chirality of transverse magnetic domain walls in Fe$_{20}$Ni$_{80}$/Ir bilayer nanostrips. Applying nanosecond current pulses with a current density of around $2times10^{12}$ A/m$^2$, the chirality of a transverse domain wall could be switched reversibly and reproducibly. These current densities are similar to the ones used for current-induced domain wall motion, indicating that the Oersted field may stabilize the transverse wall chirality during current pulses and prevent domain wall transformations.
Interactions between pairs of magnetic domain walls (DW) and pinning by radial constrictions were studied in cylindrical nanowires with surface roughness. It was found that a radial constriction creates a symmetric pinning potential well, with a change of slope when the DW is situated outside the notch. Surface deformation induces an asymmetry in the pinning potential as well as dynamical pinning. The depinning fields of the domain walls were found generally to decrease with increasing surface roughness. A DW pinned at a radial constriction creates a pinning potential well for a free DW in a parallel wire. We determined that trapped bound DW states appear above the depinning threshold and that the surface roughness facilitates the trapped bound DW states in parallel wires.
The propagation of a head-to-head magnetic domain-wall (DW) or a tail-to-tail DW in a magnetic nanowire under a static field along the wire axis is studied. Relationship between the DW velocity and DW structure is obtained from the energy consideration. The role of the energy dissipation in the field-driven DW motion is clarified. Namely, a field can only drive a domain-wall propagating along the field direction through the mediation of a damping. Without the damping, DW cannot propagate along the wire. Contrary to the common wisdom, DW velocity is, in general, proportional to the energy dissipation rate, and one needs to find a way to enhance the energy dissipation in order to increase the propagation speed. The theory provides also a nature explanation of the wire-width dependence of the DW velocity and velocity oscillation beyond Walker breakdown field.
We study thermally assisted domain wall generation in perpendicular magnetic anisotropy CoFeB trilayer nanowires by the effect of Joule heating. The anomalous Hall effect is utilized to detect magnetization reversal in order to study the domain wall generation. We observe a statistical distribution in the switching process which is consistent with the thermal activation process. Our results show that the proposed method provides an efficient way for generating domain walls in perpendicular magnetic nanowires at predefined locations.
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