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Register a new userEffect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors
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Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material at number densities from 0.001 to 0.474 to quantify the relative effects of impurity content and grain boundary structure on transport in pentacene thin-film transistors. Atomic force microscopy (AFM) and electrical measurements of top-contact pentacene thin-film transistors have been employed to directly correlate initial structure and final film structures, with the device mobility as a function of added impurity content. The results reveal a factor four decrease in mobility without significant changes in film morphology for source PnQ number fractions below ~0.008. For these low concentrations, the impurity thus directly influences transport, either as homogeneously distributed defects or by concentration at the otherwise-unchanged grain boundaries. For larger impurity concentrations, the continuing strong decrease in mobility is correlated with decreasing grain size, indicating an impurity-induced increase in the nucleation of grains during early stages of film growth.
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Pentacenequinone (PnQ) impurities have been introduced into a pentacene source material in a controlled manner to quantify the relative effects of the impurity content on grain boundary structure and thin film nucleation. Atomic force microscopy (AFM) has been employed to directly characterize films grown using 0.0-7.5% PnQ by weight in the source material. Analysis of the distribution of capture zones areas of submonolayer islands as a function of impurity content shows that for large PnQ content the critical nucleus size for forming a Pn island is smaller than for low PnQ content. This result indicates a favorable energy for formation of Pn-PnQ complexes, which in turn suggests that the primary effect of PnQ on Pn mobility may arise from homogeneous distribution of PnQ defects.
The thermal deposition and transfer Printing method had been used to produce pentacene thin-films on SiO2/Si and plastic substrates (PMMA and PVP), respectively. X-ray diffraction patterns of pentacene thin films showed reflections associated with highly ordered polycrystalline films and a coexistence of two polymorph phases classified by their d-spacing, d(001): 14.4 and 15.4 A.The dependence of the c-axis correlation length and the phase fraction on the film thickness and printing temperature were measured. A transition from the 15.4 A phase towards 14.4 A phase was also observed with increasing film thickness. An increase in the c-axis correlation length of approximately 12% ~16% was observed for Pn films transfer printed onto a PMMA coated PET substrate at 100~120 C as compared to as-grown Pn films on SiO2/Si substrates. The transfer printing method is shown to be an attractive for the fabrication of pentacene thin-film transistors on flexible substrates partly because of the resulting improvement in the quality of the pentacene film.
Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FETs) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature and light power. The field-effect mobility ($mu$$_{rm FET}$) has a gate-voltage dependent activation energy. A non-monotonic temperature dependence was observed at high gate voltage (V$_G$ $<$ -30 V) with activation energy E$_a$ $sim$ 60 - 170 meV,depending on the fabrication procedure. The gate-voltage dependent mobility and non-monotonic temperature dependence indicates that shallow traps play important role in the transport of TIPS-pentacene films. The current in the saturation regime as well as mobility increase upon light illumination and is proportional to the light intensity, mainly due to the photoconductive response. Transistors with submicron channel length showed unsaturating current-voltage characteristics due to the short channel effect. Realization of simple circuits such as NOT(inverter), NOR, and NAND logic gates are demonstrated for thin film TIPS-pentacene transistors.
To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.
We report on graphene-like mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates.
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