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Register a new userControlling the Kondo Effect in CoCu_n Clusters Atom by Atom
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Added by
J\\\"org Kr\\\"oger
Publication date
2008
fields
Physics
and research's language is
English
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Clusters containing a single magnetic impurity were investigated by scanning tunneling microscopy, spectroscopy, and ab initio electronic structure calculations. The Kondo temperature of a Co atom embedded in Cu clusters on Cu(111) exhibits a non-monotonic variation with the cluster size. Calculations model the experimental observations and demonstrate the importance of the local and anisotropic electronic structure for correlation effects in small clusters.
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The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the Silicon valleys, an exotic and hitherto unobserved valley Kondo effect appears. Together with the regular spin Kondo, the tunable valley Kondo effect allows for reversible electrical control over the symmetry of the Kondo ground state from an SU(2)- to an SU(4) -configuration.
Single Co atoms, which exhibit a Kondo effect on Cu(111), are contacted with Cu and Fe tips in a low-temperature scanning tunneling microscope. With Fe tips, the Kondo effect persists with the Abrikosov-Suhl resonance significantly broadened. In contrast, for Cu-covered W tips, the resonance width remains almost constant throughout the tunneling and contact ranges. The distinct changes of the line width are interpreted in terms of modifications of the Co d state occupation owing to hybridization with the tip apex atoms.
The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.
The tip of a low-temperature scanning tunneling microscope is brought into contact with individual Kondo impurities (cobalt atoms) adsorbed on a Cu(100) surface. A smooth transition from the tunneling regime to a point contact with a conductance of $Gapproxtext{G}_0$ occurs. Spectroscopy in the contact regime, {it i. e.}, at currents in a $mutext{A}$ range was achieved. A modified line shape is observed indicating a significant change of the Kondo temperature $T_{text{K}}$ at contact. Model calculations indicate that the proximity of the tip shifts the cobalt $d$-band and thus affects $T_{text{K}}$.
In recent years, single-atom catalysts attracted lots of attention because of their high catalytic activity, selectivity, stability, maximum atom utilization, exceptional performance, and low cost. Single-atom catalyst contains isolated individual atom which are coordinated with the surface atoms of support such as a metal oxide or 2d - materials. In this review article, we present the advancement in single-atom catalysis in recent years with a focus on the various synthesis methods and their application in catalytic reactions. We also demonstrate the reaction mechanism of a single-atom catalyst for different catalytic reactions from theoretical aspects using density functional theory.
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