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Register a new userUnconventional Landau levels in bulk graphite revealed by Raman spectroscopy
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The electronic Raman scattering of bulk graphite at zero magnetic field reveals a structureless signal characteristic of a metal. For T<~100 K and B > 2 T, several peaks at energies scaling linearly with magnetic field were observed and ascribed to transitions from the lowest energy Landau level(s) (LL) to excited states belonging to the same ladder. The LLs are equally (unequally) spaced for high (low) quantum numbers, being surprisingly consistent with the LL sequence from massive Dirac Fermions (m* = 0.033(2) m_e) with Berrys phase 2pi found in graphene bilayers. These results provide spectroscopic evidence that much of the unconventional physics recently revealed by graphene multilayers is also shared by bulk graphite.
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The emergence of flat electronic bands and of the recently discovered strongly correlated and superconducting phases in twisted bilayer graphene crucially depends on the interlayer twist angle upon approaching the magic angle $theta_M approx 1.1deg$. Although advanced fabrication methods allow alignment of graphene layers with global twist angle control of about 0.1$deg$, little information is currently available on the distribution of the local twist angles in actual magic angle twisted bilayer graphene (MATBG) transport devices. Here we map the local $theta$ variations in hBN encapsulated devices with relative precision better than 0.002$deg$ and spatial resolution of a few moir$e$ periods. Utilizing a scanning nanoSQUID-on-tip, we attain tomographic imaging of the Landau levels in the quantum Hall state in MATBG, which provides a highly sensitive probe of the charge disorder and of the local band structure determined by the local $theta$. We find that even state-of-the-art devices, exhibiting high-quality global MATBG features including superconductivity, display significant variations in the local $theta$ with a span close to 0.1$deg$. Devices may even have substantial areas where no local MATBG behavior is detected, yet still display global MATBG characteristics in transport, highlighting the importance of percolation physics. The derived $theta$ maps reveal substantial gradients and a network of jumps. We show that the twist angle gradients generate large unscreened electric fields that drastically change the quantum Hall state by forming edge states in the bulk of the sample, and may also significantly affect the phase diagram of correlated and superconducting states. The findings call for exploration of band structure engineering utilizing twist-angle gradients and gate-tunable built-in planar electric fields for novel correlated phenomena and applications.
We show that the thin films of Weyl semimetals have a regime of parameters in which they develop very flat Landau bands under strong magnetic fields. Addressing the case of thin films in a perpendicular magnetic field, we observe that two different types of Landau states may arise depending on whether the line connecting a pair of opposite Weyl nodes is parallel or perpendicular to the direction of the magnetic field. In the latter instance, we show that the flat Landau bands are made of states peaked at the two faces of the thin film. When the line connecting the Weyl nodes is parallel to the magnetic field, we see instead that the states in the Landau bands take the form of stationary waves with significant amplitude across the bulk of the material. In either case, the states in the flat levels are confined along longitudinal sections of the thin film, turning into edge states with distinctive profiles at the lateral boundaries for the two different types of Hall effect.
Energy spectroscopy of strongly interacting phases requires probes which minimize screening while retaining spectral resolution and local sensitivity. Here we demonstrate that such probes can be realized using atomic sized quantum dots bound to defects in hexagonal Boron Nitride tunnel barriers, placed at nanometric distance from graphene. With dot energies capacitively tuned by a planar graphite electrode, dot-assisted tunneling becomes highly sensitive to the graphene excitation spectrum. The spectra track the onset of degeneracy lifting with magnetic field at the ground state, and at unoccupied exited states, revealing symmetry-broken gaps which develop steeply with magnetic field - corresponding to Lande $g$ factors as high as 160. Measured up to $B = 33$ T, spectra exhibit a primary energy split between spin-polarized excited states, and a secondary spin-dependent valley-split. Our results show that defect dots probe the spectra while minimizing local screening, and are thus exceptionally sensitive to interacting states.
Scanning tunneling spectroscopy measurements were made on surfaces of two different kinds of graphite samples, Kish graphite and highly oriented pyrolytic graphite (HOPG), at very low temperatures and in high magnetic fields. We observed a series of peaks in the tunnel spectra, which grow with increasing field, both at positive and negative bias voltages. These are associated with Landau quantization of the quasi two-dimensional electrons and holes in graphite in magnetic fields perpendicular to the basal plane. Almost field independent Landau levels fixed near the Fermi energy, which are characteristic of the graphite crystalline structure, were directly observed for the first time. Calculations of the local density of states at the graphite surfaces allow us to identify Kish graphite as bulk graphite and HOPG as graphite with finite thickness effectively.
Intense light-matter interactions and unique structural and electrical properties make Van der Waals heterostructures composed by Graphene (Gr) and monolayer transition metal dichalcogenides (TMD) promising building blocks for tunnelling transistors, flexible electronics, as well as optoelectronic devices, including photodetectors, photovoltaics and QLEDs, bright and narrow-line emitters using minimal amounts of active absorber material. The performance of such devices is critically ruled by interlayer interactions which are still poorly understood in many respects. Specifically, two classes of coupling mechanisms have been proposed: charge transfer (CT) and energy transfer (ET), but their relative efficiency and the underlying physics is an open question. Here, building on a time resolved Raman scattering experiment, we determine the electronic temperature profile of Gr in response to TMD photo-excitation, tracking the picosecond dynamics of the G and 2D bands. Compelling evidence for a dominant role ET process accomplished within a characteristic time of ~ 3 ps is provided. Our results suggest the existence of an intermediate process between the observed picosecond ET and the generation of a net charge underlying the slower electric signals detected in optoelectronic applications.
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