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Register a new userDispersing bimagnons and doping induced bimagnon-charge modes in superconducting cuprates
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In the early days of high temperature superconductivity it was already recognized that magnetic properties of these materials are intimately related to the superconducting ones . When doped, the long-range ordered antiferromagnetic background of pristine copper-oxide insulators melts away and makes room for a spin liquid and superconductivity. By resonant inelastic x-ray scattering (RIXS) in the soft regime we probe the hitherto inaccessible dynamical multiple-spin correlations of the magnetic background in a series of parent compounds and in high Tc materials [NCCO (Nd2-xCexCuO4) and LSCO (La2-xSrxCuO4)]. High resolution measurements allows the clear observation of dispersing bimagnon excitations. In the undoped compounds the theory, fits the data on these coherent spin excitations without free parameters. In nearly optimally doped LSCO we observe the appearance of a new collective excitation at an energy of 250 +/- 60 meV having the signature of a coupled bimagnon-charge mode. It has a strongly reduced dispersion and lies in a so far unexplored region of momentum and energy space in the mid-infrared.
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We studied the relationship between the charge doping and the correlation, and its effects on the spectral function of the BaFe$_2$As$_2$ compound in the framework of the density functional theory combined with the dynamical mean field theory (DFT+DMFT). The calculated mass enhancements showed that the electronic correlation varies systematically from weak to strong when moving from the heavily electron-doped regime to the heavily hole-doped one. Since the compound has a multi-orbital nature, the correlation is orbital-dependent and it increases as hole-doping increases. The Fe-3d$_{xy}$ (xy) orbital is much more correlated than the other orbitals, because it reaches its half-filled situation and has a narrower energy scale around the Fermi energy. Our findings can be consistently understood as the tendency of the heavily hole-doped BaFe$_2$As$_2$ compound to an orbital-selective Mott phase (OSMP). Moreover, the fact that the superconducting state of the heavily hole-doped BaFe$_2$As$_2$ is an extreme case of such a selective Mottness constrains the non-trivial role of the electronic correlation in iron-pnictide superconductors. In addition, the calculated spectral function shows a behavior that is compatible with experimental results reported for every charge-doped BaFe$_2$As$_2$ compound and clarifies the importance of the characterization of its physical effects on the material.
We show that charge doping can induce transitions between three distinct adsorbate phases in hydrogenated and fluorinated graphene. By combining ab initio, approximate density functional theory and tight binding calculations we identify a transition from islands of C$_8$H$_2$ and C$_8$F$_2$ to random adsorbate distributions around a doping level of $pm 0.05$ e/C-atom. Furthermore, in situations with random adsorbate coverage, charge doping is shown to trigger an ordering transition where the sublattice symmetry is spontaneously broken when the doping level exceeds the adsorbate concentration. Rehybridization and lattice distortion energies make graphene which is covalently functionalized from one side only most susceptible to these two kinds of phase transitions. The energy gains associated with the clustering and ordering transitions exceed room temperature thermal energies.
We present a combined magnetic neutron scattering and muon spin rotation study of the nature of the magnetic and superconducting phases in electronically phase separated La(2-x)Sr(x)CuO(4+y), x = 0.04, 065, 0.09. For all samples, we find long-range modulated magnetic order below T_N ~ T_c = 39 K. In sharp contrast wit oxygen-stoichiometric La(2-x)Sr(x)CuO(4), we find that the magnetic propagation vector as well as the ordered magnetic moment is independent of Sr content and consistent with that of the striped cuprates. Our study provides direct proof that superoxygenation in La(2-x)Sr(x)CuO(4+y) allows the spin stripe ordered phase to emerge and phase separate from superconducting regions with the hallmarks of optimally doped oxygen-stoichiometric La(2-x)Sr(x)CuO(4).
We report on the investigation of vibrational and electronic properties of the Pb doped dichalcogenide PbxTaSe2 using Raman scattering experiments. We observe a marked variation of the main vibrational modes with Pb concentration x. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c axis direction [1]. The temperature and polarization dependence of Raman spectra of PbxTaSe2 revealed additional broad modes in the low frequency regime which are discussed in context of remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electronic devices3,4. These 2DEGs at complex oxide interfaces involve many-body interactions and give rise to a rich set of phenomena5, for example, superconductivity6, magnetism7,8, tunable metal-insulator transitions9, and phase separation10. However, large enhancement of the interfacial electron mobility remains a major and long-standing challenge for fundamental as well as applied research of complex oxides11-15. Here, we inserted a single unit cell insulating layer of polar La1-xSrxMnO3 (x=0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 created at room temperature. We find that the electron mobility of the interfacial 2DEG is enhanced by more than two orders of magnitude. Our in-situ and resonant x-ray spectroscopic in addition to transmission electron microscopy results indicate that the manganite layer undergoes unambiguous electronic reconstruction and leads to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits clear Shubnikov-de Haas oscillations and the initial manifestation of the quantum Hall effect, demonstrating an unprecedented high-mobility and low electron density oxide 2DEG system. These findings open new avenues for oxide electronics.
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