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Growth and characterization of A_{1-x}K_xFe_2As_2 (A = Ba, Sr) single crystals with x=0 - 0.4

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 Added by Huiqian Luo
 Publication date 2008
  fields Physics
and research's language is English




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Single crystals of A$_{1-x}$K$_x$Fe$_2$As$_2$ (A=Ba, Sr) with high quality have been grown successfully by FeAs self-flux method. The samples have sizes up to 4 mm with flat and shiny surfaces. The X-ray diffraction patterns suggest that they have high crystalline quality and c-axis orientation. The non-superconducting crystals show a spin-density-wave (SDW) instability at about 173 K and 135 K for Sr-based and Ba-based compound, respectively. After doping K as the hole dopant into the BaFe$_2$As$_2$ system, the SDW transition is smeared, and superconducting samples with the compound of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ (0 $< x leqslant$ 0.4) are obtained. The superconductors characterized by AC susceptibility and resistivity measurements exhibit very sharp superconducting transition at about 36 K, 32 K, 27 K and 23 K for x= 0.40,0.28,0.25 and 0.23, respectively.



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The transport and superconducting properties of Ba_{1-x}K_xFe_2As_2 single crystals with T_c = 31 K were studied. Both in-plane and out-of plane resistivity was measured by modified Montgomery method. The in-plane resistivity for all studied samples, obtained in the course of the same synthesis, is almost the same, unlike to the out-of plane resistivity, which differ considerably. We have found that the resistivity anisotropy gamma=rho_c /rho_{ab} is almost temperature independent and lies in the range 10-30 for different samples. This, probably, indicates on the extrinsic nature of high out-of-plane resistivity, which may appear due to the presence of the flat defects along Fe-As layers in the samples. This statement is supported by comparatively small effective mass anisotropy, obtained from the upper critical field measurements, and from the observation of the so-called Friedel transition, which indicates on the existence of some disorder in the samples in c-direction.
116 - S. W. Zhang , L. Ma , Y. D. Hou 2009
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