Fabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures

We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility $mu_{h}>10^{5}{rm cm}^{2}{rm V}^{-1}{rm s}^{-1}$ and an electron mobility $mu_{e}>10^{6}{rm cm}^{2}{rm V}^{-1}{rm s}^{-1}$ at 1.5K. Preliminary drag measurements made down to T=300mK indicate an enhancement of coulomb interaction over the values obtained from a static Random Phase Approximation (RPA) calculation.