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Register a new userAn Experimental and Theoretical Study of the Variation of 4f Hybridization Across the La1-xCexIn3 Series
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Crystal structures of a series of La1-xCexIn3 (x = 0.02, 0.2, 0.5, or 0.8) intermetallic compounds have been investigated by both neutron and X-ray diffraction, and their physical properties have been characterized by magnetic susceptibility and specific heat measurements. Our results emphasize atypical atomic displacement parameters (ADP) for the In and the rare-earth sites. Depending on the x value, the In ADP presents either an ellipsoidal elongation (La-rich compounds) or a butterfly-like distortion (Ce-rich compounds). These deformations have been understood by theoretical techniques based on the band theory and are the result of hybridization between conduction electrons and 4f-electrons.
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Ce 3d-4f resonant angle-resolved photoemission measurements on CeCoGe$_{1.2}$Si$_{0.8}$ and CeCoSi$_{2}$ have been performed to understand the Fermi surface topology as a function of hybridization strength between Ce 4$f$- and conduction electrons in heavy-fermion systems. We directly observe that the hole-like Ce 4$f$-Fermi surfaces of CeCoSi$_{2}$ is smaller than that of CeCoGe$_{1.2}$Si$_{0.8}$, indicating the evolution of the Ce 4$f$-Fermi surface with the increase of the hybridization strength. In comparision with LDA calculation, the Fermi surface variation cannot be understood even though the overall electronic structure are roughly explained, indicating the importance of strong correlation effects. We also discuss the relation between the Ce 4$f$-Fermi surface variation and the Kondo peaks.
Density functional theory (DFT) within the local density approximation (LDA) is used to understand the electronic properties of Na1/3CoO2 and Na1/3CoO2(H2O)4/3, which was recently found to be superconducting1. Comparing the LDA charge density of CoO2 and the Na doped phases indicates that doping does not simply add electrons to the t2g states. In fact, the electron added in the t2g state is dressed by hole density in the eg state and electron density in the oxygen states via rehybridization. In order to fully understand this phenomenon, a simple extension of the Hubbard Hamiltonian is proposed and solved using the dynamical mean-field theory (DMFT). This simple model confirms that the rehybridization is driven by a competition between the on-site coulomb interaction and the hybridization. In addition, we find that the presence of eg-oxygen hybridization effectively screens the low energy excitations. To address the role that water plays in creating the superconducting state, we compare the LDA band structure of Na1/3CoO2 and its hydrated counterpart. This demonstrates that hydration does cause the electronic structure to become more two-dimensional.
In heavy-fermion compounds, f electrons show both itinerant and localized behaviour depending on the external conditions, and the hybridization between localized f electrons and itinerant conduction bands gives rise to their exotic properties like heavy-fermions, magnetic orders and unconventional superconductivity. Duo to the risk of handling radioactive actinide materials, the direct experimental evidence of the band structure evolution across the localized-itinerant and magnetic transitions for 5f electrons is lacking. Here, by using angle-resolved photoelectron spectroscopy, we revealed the dual nature (localized vs itinerant) and the development of two different kinds of heavy quasi-particle bands of 5f electrons in antiferromagnetic (AFM) USb2. Partially opened energy gaps were observed on one quasi-particle 5f band cross the AFM transition around 203 K, indicating that the magnetic orders in USb2 are of spin density wave (SDW) type similar to Cr. The localized 5f electrons and itinerant conduction bands hybridize to form another heavy quasi-particle band at about 120 K, and then open hybridization gaps at even lower temperature. Our results provide direct spectral demonstration of the localized-itinerant transition, hybridization and SDW transition of 5f electrons for uranium-based materials.
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