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The low-temperature specific heat of a superconductor Mo3Sb7 with T_c = 2.25 (0.05) K has been measured in magnetic fields up to 5 T. In the normal state, the electronic specific heat coefficient gamma_n, and the Debye temperature Theta_D are found to be 34.5(2) mJ/molK^2 and 283(5) K, respectively. The enhanced gamma_n value is interpreted due to a narrow Mo-4d band pinned at the Fermi level. The electronic specific heat in the superconducting state can be analyzed in terms a phenomenological two BCS-like gap model with the gap widths 2Delta_1/k_BT_c = 4.0 and 2Delta_2/k_BT_c = 2.5, and relative weights of the mole electronic heat coefficients gamma_1/gamma_n = 0.7 and gamma_2/gamma_n = 0.3. Some characteristic thermodynamic parameters for the studied superconductor, like the specific heat jump at T_c, DeltaC_p(T_c)/gamma_nT_c, the electron-phonon coupling constant,lambda_eph, the upper H_c2 and thermodynamic critical H_c0 fields, the penetration depth, lambda, coherence length xi, and the Ginzburg-Landau parameter kappa are evaluated. The estimated values of parameters like 2Delta/k_BT_c, DeltaC_p(T_c)/gamma_nT_c, N(E_F), and lambda_eph suggest that Mo3Sb7 belongs to intermediate-coupling regime. The electronic band structure calculations indicate that the density of states near the Fermi level is formed mainly by the Mo-4d orbitals and there is no overlapping between the Mo- 4d and Sb-sp orbitals.
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We report ac susceptibility measurements of polycrystalline CePt_3Si down to 60 mK and in applied fields up to 9 T. In zero field, a full Meissner state emerges at temperatures T/Tc < 0.3, where Tc=0.65 K is the onset transition temperature. Though transport measurements show a relatively high upper critical field Bc2 ~ 4-5 T, the low temperature susceptibility, chi, is quite fragile to applied field, with chi diminishing rapidly in fields of a few kG. Interestingly, the field dependence of chi is well described by the power law, 4pichi=(B/B_c)^{1/2}, where Bc is the field at which the onset of resistance is observed in transport measurements.
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