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Register a new userGiant Uniaxial Anisotropy in the Magnetic and Transport Properties of CePd5Al2
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Electrical resistivity rho, magnetic susceptibility chi, magnetization M and specific heat measurements are reported on a singlecrystalline sample of CePd5Al2, showing successive antiferromagnetic orderings at T_N1=4.1 K and T_N2=2.9 K. The temperature dependence of T_N1 shows a Kondo metal behavior with large anisotropy, rho_c/rho_a=3.2 at 20 K, and opening of a superzone gap along the tetragona c-direction below T_N1. Both T_N1 and T_N2 gradually increase with applying pressure up to 2.5 GPa. The data of chi(T) and M(B) in the paramagnetic state were analyzed using a crystalline electric field (CEF) model. It led to a Kramers doublet ground state with wave functions consisting primarily of |+-5/2>, whose energy level is isolated from the excited states by 230 and 300 K. This CEF effect gives rise to the large anisotropy in the paramagnetic state. In the ordered state, the uniaxial magnetic anisotropy is manifested as M_c/M_a=20 in B=5 T and at 1.9 K, and chi_c/chi_a=25 in B=0.1 T and at 4 K. This huge uniaxial magnetic anisotropy in the antiferromagnetic states can be interpreted in terms of isotropic magnetic interaction among the Ce^{3+} moments governed by the strong CEF. In powder neutron diffraction experiments, magnetic reflections were observed owing to the antiferromagnetic ordered states below T_N1, however, no additional reflection was found below T_N2.
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We report on the electrical resistivity, magnetic susceptibility and heat-capacity measurements on a new intermetallic compound CePd5Al2, crystallizing in the ZrNi2Al5-type tetragonal structure, with lattice parameters a = 4.156 A and c = 14.883 A. The compound presents Kondo lattice behavior and an easy-plane antiferromagnetic ground state with two magnetic transitions at 2.9 K and 3.9 K. The Sommerfeld coefficient is estimated as 60 mJ/mol K^2.
Narrow-gap higher mobility semiconducting alloys In_{1-x}Mn_{x}Sb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In_{0.98}Mn_{0.02}Sb was detected by the observation of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional (reentrant) magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of (III,Mn)V semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of (InMn)Sb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection (AR) spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers (up to 65% at 4.2K) within a cluster.
The trigonal compound EuMg2Bi2 has recently been discussed in terms of its topological band properties. These are intertwined with its magnetic properties. Here detailed studies of the magnetic, thermal, and electronic transport properties of EuMg2Bi2 single crystals are presented. The Eu{+2} spins-7/2 in EuMg2Bi2 exhibit an antiferromagnetic (AFM) transition at a temperature TN = 6.7 K, as previously reported. By analyzing the anisotropic magnetic susceptibility chi data below TN in terms of molecular-field theory (MFT), the AFM structure is inferred to be a c-axis helix, where the ordered moments in the hexagonal ab-plane layers are aligned ferromagnetically in the ab plane with a turn angle between the moments in adjacent moment planes along the c axis of about 120 deg. The magnetic heat capacity exhibits a lambda anomaly at TN with evidence of dynamic short-range magnetic fluctuations both above and below TN. The high-T limit of the magnetic entropy is close to the theoretical value for spins-7/2. The in-plane electrical resistivity rho(T) data indicate metallic character with a mild and disorder-sensitive upturn below Tmin = 23 K. An anomalous rapid drop in rho(T) on cooling below TN as found in zero field is replaced by a two-step decrease in magnetic fields. The rho(T) measurements also reveal an additional transition below TN in applied fields of unknown origin that is not observed in the other measurements and may be associated with an incommensurate to commensurate AFM transition. The dependence of TN on the c-axis magnetic field Hperp was derived from the field-dependent chi(T), Cp(T), and rho(T) measurements. This TN(Hperp) was found to be consistent with the prediction of MFT for a c-axis helix with S = 7/2 and was used to generate a phase diagram in the Hperp-T plane.
Magnetization, heat capacity, electrical resistivity, thermoelectric power, and Hall effect have been investigated on single-crystalline Ce_2PdSi_3. This compound is shown to order antiferromagnetically below Neel temperature (T_N) ~3 K. The Sommerfeld coefficient far below T_N is found to be about 110 mJ/K^2 mol Ce, which indicates the heavy-fermion character of this compound. The transport and magnetic properties exhibit large anisotropy with an interplay between crystalline-electric-field (CEF) and Kondo effects. The sign of thermoelectric power is opposite for different directions at high temperatures and the ordinary Hall coefficient is anisotropic with opposite sign for different geometries, indicating the anisotropic Fermi surface. The CEF analysis from the temperature dependence of magnetic susceptibility suggests that the ground state is |+/-1/2>. The first and the second excited CEF doublet levels are found to be located at about 30 and 130 K, respectively. The Kondo temperature is estimated to be the same order as T_N, indicating the presence of a delicate competition between the Kondo effect and magnetic order.
We have demonstrated the effect of hydrostatic pressure on magnetic and transport properties, and thermal transport properties in electron-doped manganites CaMn$_{1-x}$Sb$_{x}$O$_{3}$. The substitution of Sb$^{5+}$ ion for Mn $^{4+}$site of the parent matrix causes one-electron doping with the chemical formula CaMn$^{4+}_{1-2x}$Mn$^{3+}_{x}$Sb$^{5+}_{x}$O$_{3}$ accompanied by a monotonous increase in unit cell volume as a function of $x$. Upon increasing the doping level of Sb, the magnitudes of both electrical resistivity and negative Seebeck coefficient are suppressed at high temperatures, indicating the electron doping. Anomalous diamagnetic behaviors at $x=0.05$ and 0.08 are clearly observed in field cooled dc magnetization. The effect of hydrostatic pressure on dc magnetization is in contrast to the chemical pressure effect due to Sb doping. The dynamical effect of ac magnetic susceptibility measurement points to the formation of the magnetically frustrated clusters such as FM clusters embedded in canted AFM matrix.
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