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Register a new userMagnetoelectric Control of Domain Walls in a Ferrite Garnet Film
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Added by
Aleksandr Pyatakov P.
Publication date
2008
fields
Physics
and research's language is
English
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The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field (the direction of wall displacement changes with the polarity of the voltage) and even with respect to the magnetization in domains. The inhomogeneous magnetoelectric interaction as a possible mechanism of the effect is proposed.
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The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 400 V voltage pulses gave the value of domain wall velocity in the range 30-50 m/s. The same velocity was achieved in magnetic field pulse about 50 Oe.
The dynamic observation of domain wall motion induced by electric field in magnetoelectric iron garnet film is reported. Measurements in 800 kV/cm electric field pulses gave the domain wall velocity ~45 m/s. Similar velocity was achieved in magnetic field pulse about 50 Oe. Reversible and irreversible micromagnetic structure transformation is demonstrated. These effects are promising for applications in spintronics and magnetic memory.
Interaction between a Bloch wall in a ferrite-garnet film and a vortex in a superconductor is analyzed in the London approximation. Equilibrium distribution of vortices formed around the Bloch wall is calculated. The results agree quantitatively with magneto-optical experiment where an in-plane magnetized ferrite-garnet film placed on top of NbSe2 superconductor allows observation of individual vortices. In particular, our model can reproduce a counter-intuitive attraction observed between vortices and a Bloch wall having the opposite polarity. It is explained by magnetic charges appearing due to discontinuity of the in-plane magnetization across the wall.
Ferroic domain walls could play an important role in microelectronics, given their nanometric size and often distinct functional properties. Until now, devices and device concepts were mostly based on mobile domain walls in ferromagnetic and ferroelectric materials. A less explored path is to make use of polar domain walls in nonpolar ferroelastic materials. Indeed, while the polar character of ferroelastic domain walls has been demonstrated, polarization control has been elusive. Here, we report evidence for the electrostatic signature of the domain-wall polarization in nonpolar calcium titanate (CaTiO3). Macroscopic mechanical resonances excited by an ac electric field are observed as a signature of a piezoelectric response caused by polar walls. On the microscopic scale, the polarization in domain walls modifies the local surface potential of the sample. Through imaging of surface potential variations, we show that the potential at the domain wall can be controlled by electron injection. This could enable devices based on nondestructive information readout of surface potential.
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