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Register a new userExperimental realization of a Fabry-Perot-type interferometer by co-propagating edge states in the quantum Hall regime
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A Fabry-Perot-type interferometer is experimentally realized for electrons in a semiconductor device. A special experimental geometry creates interference conditions for co-propagating electrons in quantum Hall edge states, which results in oscillations of the current through the device. The visibility of these oscillations is found to increase at the high-field edge of the quantum Hall plateau.
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A fabrication method for electronic quantum Hall Fabry-Perot interferometers (FPI) is presented. Our method uses a combination of e-beam lithography and low-damage dry-etching to produce the FPIs and minimize the excitation of charged traps or deposition of impurities near the device. Optimization of the quantum point contacts (QPC) is achieved via systematically varying the etch depth and monitoring the device resistance between segmented etching sessions. The etching is stopped when a desired value of resistance is obtained. Finer control of interference trajectories is obtained by the gate metallized inside the etched area by e-beam evaporation. Our approach allows for a control of the delicate potential bending near the quantum well by tuning the confining potential of the quantum point contacts.
We investigate nonlinear transport in electronic Fabry-Perot interferometers in the integer quantum Hall regime. For interferometers sufficiently large that Coulomb blockade effects are absent, a checkerboard-like pattern of conductance oscillations as a function of dc bias and perpendicular magnetic field is observed. Edge-state velocities extracted from the checkerboard data are compared to model calculations and found to be consistent with a crossover from skipping orbits at low fields to E x B drift at high fields. Suppression of visibility as a function of bias and magnetic field is accounted for by including energy- and field-dependent dephasing of edge electrons.
The advent of few-layer graphenes has given rise to a new family of two-dimensional systems with emergent electronic properties governed by relativistic quantum mechanics. The multiple carbon sublattices endow the electronic wavefunctions with pseudospin, a lattice analog of the relativistic electron spin, while the multilayer structure leads to electric field effect tunable electronic bands. Here we use these properties to realize giant conductance oscillations in ballistic trilayer graphene Fabry-Perot interferometers, which result from phase coherent transport through resonant bound states beneath an electrostatic barrier. We cloak these states by selectively decoupling them from the leads, resulting in transport via non-resonant states and suppression of the giant oscillations. Cloaking is achieved both classically, by manipulating quasiparticle momenta with a magnetic field, and quantum mechanically, by locally varying the pseudospin character of the carrier wavefunctions. Our results illustrate the unique potential of trilayer graphene as a versatile platform for electron optics and pseudospintronics.
We investigate a Fabry-Perot interferometer in the integer Hall regime in which only one edge channel is transmitted and n channels are trapped into the interferometer loop. Addressing recent experimental observations, we assume that Coulomb blockade effects are completely suppressed due to screening, while keeping track of a residual strong short range electron-electron interaction between the co-propagating edge channels trapped into the interferometer loop. This kind of interaction can be completely described in the framework of the edge-magnetoplasmon scattering matrix theory allowing us to evaluate the backscattering current and the associated differential conductance as a function of the bias voltage. The remarkable features of these quantities are discussed as a function of the number of trapped channels. The developed formalism reveals very general and provides also a simple way to model the experimentally relevant geometry in which some of the trapped channels are absorbed into an Ohmic contact, leading to energy dissipation.
We propose an intrinsic 3D Fabry-Perot type interferometer, coined higher-order interferometer, that utilizes the chiral hinge states of second-order topological insulators and cannot be equivalently mapped to 2D space because of higher-order topology. Quantum interference patterns in the two-terminal conductance of this interferometer are controllable not only by tuning the strength but also, particularly, by rotating the direction of the magnetic field applied perpendicularly to the transport direction. Remarkably, the conductance exhibits a characteristic beating pattern with multiple frequencies with respect to field strength or direction. Our novel interferometer provides feasible and robust magneto-transport signatures to probe the particular hinge states of higher-order topological insulators.
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