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Register a new userLasing of donor-bound excitons in ZnSe microdisks
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Excitons bound to flourine atoms in ZnSe have the potential for several quantum optical applications. Examples include optically accessible quantum memories for quantum information processing and lasing without inversion. These applications require the bound-exciton transitions to be coupled to cavities with high cooperativity factors, which results in the experimental observation of low-threshold lasing. We report such lasing from fluorine-doped ZnSe quantum wells in 3 and 6 micron microdisk cavities. Photoluminescence and selective photoluminescence spectroscopy confirm that the lasing is due to bound-exciton transitions.
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We report on the optical investigation of single electron spins bound to fluorine donor impurities in ZnSe. Measurements of photon antibunching establish the presence of single, isolated optical emitters, and magneto-optical studies are consistent with the presence of an exciton bound to the spin-impurity complex. The isolation of this single donor-bound exciton complex and its potential homogeneity offer promising prospects for a scalable semiconductor qubit with an optical interface.
The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron doping. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (> 6 ${mu}$s) and polarization lifetimes (> 100 ns). Resonant excitation of the free inter- and intra-valley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellites photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.
We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified $^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband AEDMR in a commercial ESR resonator. Implementing Auger-electron-detected ENDOR, we further demonstrate the optically-assisted control of the nuclear spin under conditions where the hyperfine splitting is not resolved in the optical spectrum. Compared to previous studies, this significantly relaxes the requirements on the sample and the experimental setup, e.g. with respect to strain, isotopic purity and temperature. We show AEDMR of phosphorus donors in silicon with natural isotope composition, and discuss the feasibility of ENDOR measurements also in this system.
The coherent optical response from 140~nm and 65~nm thick ZnO epitaxial layers is studied using transient four-wave-mixing spectroscopy with picosecond temporal resolution. Resonant excitation of neutral donor-bound excitons results in two-pulse and three-pulse photon echoes. For the donor-bound A exciton (D$^0$X$_text{A}$) at temperature of 1.8~K we evaluate optical coherence times $T_2=33-50$~ps corresponding to homogeneous linewidths of $13-19~mu$eV, about two orders of magnitude smaller as compared with the inhomogeneous broadening of the optical transitions. The coherent dynamics is determined mainly by the population decay with time $T_1=30-40$~ps, while pure dephasing is negligible in the studied high quality samples even for strong optical excitation. Temperature increase leads to a significant shortening of $T_2$ due to interaction with acoustic phonons. In contrast, the loss of coherence of the donor-bound B exciton (D$^0$X$_text{B}$) is significantly faster ($T_2=3.6$~ps) and governed by pure dephasing processes.
A new mechanism for exciton lasing in ZnSe/ZnCdSe quantum wells is proposed. Lasing, occurring below the lowest exciton line, may be associated with a BCS-like condensed (coherent) exciton state. This state is most stable at low temperatures for densities in the transition region separating the exciton Bose gas and the coherent exciton state. Calculations show the gain region to lie below the exciton line and to be separated from the absorption regime by a transparency region of width, for example, about 80 meV for a 90 Angstrom ZnSe/Zn_(0.75)Cd_(0.25)Se quantum well. Experimental observation of the transparency region using differential spectroscopy would confirm this picture.
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