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Register a new userNon-quasiparticle states in Co$_2$MnSi evidenced through magnetic tunnel junction spectroscopy measurements
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We investigate the effects of electronic correlations in the full-Heusler Co$_2$MnSi, by combining a theoretical analysis of the spin-resolved density of states with tunneling-conductance spectroscopy measurements using Co$_2$MnSi as electrode. Both experimental and theoretical results confirm the existence of so-called non-quasiparticle states and their crucial contribution to the finite-temperature spin polarisation in this material.
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Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of highly spin polarized La0.7Sr0.3MnO3 and Fe3O4 electrodes with magnetic NiMn2O4 (NMO) insulating barrier layers provide a magnetic tunnel junction system in which we can probe the effect of the barrier by comparing junction behavior above and below the Curie temperature of the barrier layer. When the barrier is paramagnetic, the spin polarized transport is dominated by interface scattering and surface spin waves; however, when the barrier is ferrimagnetic, spin flip scattering due to spin waves within the NMO barrier dominates the transport.
The spectrum of a segment of InAs nanowire, confined between two superconducting leads, was measured as function of gate voltage and superconducting phase difference using a third normal-metal tunnel probe. Sub-gap resonances for odd electron occupancy---interpreted as bound states involving a confined electron and a quasiparticle from the superconducting leads, reminiscent of Yu-Shiba-Rusinov states---evolve into Kondo-related resonances at higher magnetic fields. An additional zero bias peak of unknown origin is observed to coexist with the quasiparticle bound states.
Transverse-field muon-spin rotation ($mu$SR) experiments were performed on a single crystal sample of the non-centrosymmetric system MnSi. The observed angular dependence of the muon precession frequencies matches perfectly the one of the Mn-dipolar fields acting on the muons stopping at a 4a position of the crystallographic structure. The data provide a precise determination of the magnetic dipolar tensor. In addition, we have calculated the shape of the field distribution expected below the magnetic transition temperature $T_C$ at the 4a muon-site when no external magnetic field is applied. We show that this field distribution is consistent with the one reported by zero-field $mu$SR studies. Finally, we present ab initio calculations based on the density-functional theory which confirm the position of the muon stopping site inferred from transverse-field $mu$SR. In view of the presented evidence we conclude that the $mu$SR response of MnSi can be perfectly and fully understood without invoking a hypothetical magnetic polaron state.
We consider a two-orbital tight-binding model defined on a layered three-dimensional hexagonal lattice to investigate the properties of topological nodal lines and their associated drumhead surface states. We examine these surface states in centrosymmetric systems, where the bulk nodal lines are of Dirac type (i.e., four-fold degenerate), as well as in non-centrosymmetric systems with strong Rashba and/or Dresselhaus spin-orbit coupling, where the bulk nodal lines are of Weyl type (i.e., two-fold degenerate). We find that in non-centrosymmetric systems the nodal lines and their corresponding drumhead surface states are fully spin polarized due to spin-orbit coupling. We show that unique signatures of the topologically nontrivial drumhead surface states can be measured by means of quasiparticle scattering interference, which we compute for both Dirac and Weyl nodal line semimetals. At the end, we analyze the possible crystal structures with a symmetry that supports flat surface states which are effectively ringlike.
The implementation and control of room temperature ferromagnetism (RTFM) by adding magnetic atoms to a semiconductors lattice has been one of the most important problems in solid state state physics in the last decade. Herein we report for the first time, to our knowledge, on the mechanism that allows RTFM to be tuned by the inclusion of emph{non-magnetic} aluminum in nickel ferrite. This material, NiFe$_{2-x}$Al$_x$O$_4$ (x=0, 0.5, 1.5), has already shown much promise for magnetic semiconductor technologies, and we are able to add to its versatility technological viability with our results. The site occupancies and valencies of Fe atoms (Fe$^{3+}$ T$_d$, Fe$^{2+}$ O$_h$, and Fe$^{3+}$ O$_h$) can be methodically controlled by including aluminum. Using the fact that aluminum strongly prefers a 3+ octahedral environment, we can selectively fill iron sites with aluminum atoms, and hence specifically tune the magnetic contributions for each of the iron sites, and therefore the bulk material as well. Interestingly, the influence of the aluminum is weak on the electronic structure (supplemental material), allowing one to retain the desirable electronic properties while achieving desirable magnetic properties.
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