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Register a new userIntersublevel Polaron Dephasing in Self-Assembled Quantum Dots
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Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy conduction band transition due to coherent acoustic phonon generation. The subsequent single exponential decay yields long intraband dephasing times of 90 ps. We find excellent agreement between our measured and calculated FWM dynamics, and show that both real and virtual acoustic phonon processes are necessary to explain the temperature dependence of the polarization decay.
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We calculate the lifetime of conduction band excited states in self-assembled quantum dots by taking into account LO-phonon-electron interaction and various anharmonic phonon couplings. We show that polaron relaxation cannot be accurately described by a semi-classical model. The contributions of different anharmonic decay channels are shown to depend strongly on the polaron energy. We calculate the energy dependence of polaron lifetime and compare our results to available experimental measurements of polaron decay time in InAs/GaAs quantum dots.
The radiative recombination rates of interacting electron-hole pairs in a quantum dot are strongly affected by quantum correlations among electrons and holes in the dot. Recent measurements of the biexciton recombination rate in single self-assembled quantum dots have found values spanning from two times the single exciton recombination rate to values well below the exciton decay rate. In this paper, a Feynman path-integral formulation is developed to calculate recombination rates including thermal and many-body effects. Using real-space Monte Carlo integration, the path-integral expressions for realistic three-dimensional models of InGaAs/GaAs, CdSe/ZnSe, and InP/InGaP dots are evaluated, including anisotropic effective masses. Depending on size, radiative rates of typical dots lie in the regime between strong and intermediate confinement. The results compare favorably to recent experiments and calculations on related dot systems. Configuration interaction calculations using uncorrelated basis sets are found to be severely limited in calculating decay rates.
We report on capacitance-voltage spectroscopy of self-assembled InAs quantum dots under constant illumination. Besides the electronic and excitonic charging peaks in the spectrum reported earlier, we find additional resonances associated with nonequilibrium state tunneling unseen in C(V) measurements before. We derive a master-equation based model to assign the corresponding quantum state tunneling to the observed peaks. C(V) spectroscopy in a magnetic field is used to verify the model-assigned nonequilibrium peaks. The model is able to quantitatively address various experimental findings in C(V) spectroscopy of quantum dots such as the frequency and illumination dependent peak height, a thermal shift of the tunneling resonances and the occurrence of the additional nonequilibrium peaks.
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating quantum transport phenomena and outstanding optical functionalities. In this paper, we report charge sensing experiments in self-assembled quantum dots. We choose two adjacent dots, and fabricate source and drain electrodes on each dot, in which either dot works as a charge sensor for the other target dot. The sensor dot current significantly changes when the number of electrons in the target dot changes by one, demonstrating single-electron charge sensing. We have also demonstrated real-time detection of single-electron tunnelling events. This charge sensing technique will be an important step towards combining efficient electrical readout of single-electron with intriguing quantum transport physics or advanced optical and photonic technologies developed for self-assembled quantum dots.
The dephasing time of the lowest bright exciton in CdSe/ZnS wurtzite quantum dots is measured from 5 K to 170 K and compared with density dynamics within the exciton fine structure using a sensitive three-beam four-wave-mixing technique unaffected by spectral diffusion. Pure dephasing via acoustic phonons dominates the initial dynamics, followed by an exponential zero-phonon line dephasing of 109 ps at 5 K, much faster than the ~10 ns exciton radiative lifetime. The zero-phonon line dephasing is explained by phonon-assisted spin-flip from the lowest bright state to dark exciton states. This is confirmed by the temperature dependence of the exciton lifetime and by direct measurements of the bright-dark exciton relaxation. Our results give an unambiguous evidence of the physical origin of the exciton dephasing in these nanocrystals.
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