Thin film metal-insulator-metal junctions are used in a novel approach to investigate the dissipation of potential energy of multiply charged ions impinging on a polycrystalline metal surface. The ion-metal interaction leads to excited electrons and holes within the top layer. A substantial fraction of these charge carriers is transported inwards and can be measured as an internal current in the thin film tunnel junction. In Ag-AlOX-Al junctions, yields of typically 0.1-1 electrons per impinging ion are detected in the bottom Al layer. The separate effects of potential and kinetic energy on the tunneling yield are investigated by varying the charges state of the Ar projectile ions from 2+ to 9+ for kinetic energies in the range from 1 to 12 keV. The tunneling yield is found to scale linearly with the potential energy of the projectile.
Ultrafast dynamics of graphite is investigated by time-resolved photoemission spectroscopy. We observe spectral features of direct photoexcitations, non-thermal electron distributions, and recovery dynamics occurring with two time scales having distinct pump-power dependences. Additionally, we find an anomalous increase of the spectral intensity around the Fermi level, and we attribute this to spectral broadenings due to coupled optical phonons in the transient. The fingerprints of the coupled optical phonons occur from the temporal region where the electronic temperature is still not definable. This implies that there is a mechanism of ultrafast-and-efficient phonon generations beyond a two-temperature model.
Graphene is expected to be rather insensitive to ionizing particle radiation. We demonstrate that single layers of exfoliated graphene sustain significant damage from irradiation with slow highly charged ions. We have investigated the ion induced changes of graphene after irradiation with highly charged ions of different charge states (q = 28-42) and kinetic energies E_kin = 150-450 keV. Atomic force microscopy images reveal that the ion induced defects are not topographic in nature but are related to a significant change in friction. To create these defects, a minimum charge state is needed. In addition to this threshold behaviour, the required minimum charge state as well as the defect diameter show a strong dependency on the kinetic energy of the projectiles. From the linear dependency of the defect diameter on the projectile velocity we infer that electronic excitations triggered by the incoming ion in the above-surface phase play a dominant role for this unexpected defect creation in graphene.
Hot-carrier cooling (HCC) in metal halide perovskites in the high-density regime is significantly slower compared to conventional semiconductors. This effect is commonly attributed to a hot-phonon bottleneck but the influence of the lattice properties on the HCC behaviour is poorly understood. Using pressure-dependent transient absorption spectroscopy (fs-TAS) we find that at an excitation density below Mott transition, pressure does not affect the HCC. On the contrary, above Mott transition, HCC in methylammonium lead iodide (MAPbI3) is around two times as fast at 0.3 GPa compared to ambient pressure. Our electron-phonon coupling calculations reveal about two times stronger electron-phonon coupling for the inorganic cage mode at 0.3 GPa. However, our experiments reveal that pressure promotes faster HCC only above Mott transition. Altogether, these findings suggest a change in the nature of excited carriers in the high-density regime, providing insights on the electronic behavior of devices operating at such high charge-carrier density.
The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the solution of Boltzmann-type kinetic equations allows one to obtain quantitative results for spin relaxation in semiconductors that go beyond the original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results using surface sensitive two-photon photoemission techniques show that the spin relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface is several times longer than the corresponding bulk spin relaxation-times. A theoretical explanation of these results in terms of the reduced density of holes in the band-bending region at the surface is presented.
Many of the exotic properties proposed to occur in graphene rely on the possibility of increasing the spin orbit coupling (SOC). By combining analytical and numerical tight binding calculations, in this work we study the SOC induced by heavy adatoms with active electrons living in $p$ orbitals. Depending on the position of the adatoms on graphene different kinds of SOC appear. Adatoms located in hollow position induce spin conserving intrinsic like SOC whereas a random distribution of adatoms induces a spin flipping Rashba like SOC. The induced SOC is linearly proportional to the adatoms concentration, indicating the inexistent interference effects between different adatoms. By computing the Hall conductivity we have proved the stability of the topological quantum Hall phases created by the adatoms against inhomogeneous spin orbit coupling . For the case of Pb adatoms, we find that a concentration of 0.1 adatom per carbon atom generates SOCs of the order of $sim$40$meV$.