We present measurements of the magnetic field dependent microwave surface resistance in laser-ablated YBa$_2$Cu$_3$O$_{7-delta}$ films on SrTiO$_3$ substrates. BaZrO$_3$ crystallites were included in the films using composite targets containing BaZrO$_3$ inclusions with mean grain size smaller than 1 $mu$m. X-ray diffraction showed single epitaxial relationship between BaZrO$_3$ and YBa$_2$Cu$_3$O$_{7-delta}$. The effective surface resistance was measured at 47.7 GHz for 60$< T <$90 K and 0$< mu_0H <$0.8 T. The magnetic field had a very different effect on pristine YBa$_2$Cu$_3$O$_{7-delta}$ and YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$, while for $mu_0H=$0 only a reduction of $T_c$ in the YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$ film was observed, consistent with dc measurements. At low enough $T$, in moderate fields YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$ exhibited an intrinsic thin film resistance lower than the pure film. The results clearly indicate that BaZrO$_3$ inclusions determine a strong reduction of the field-dependent surface resistance. From the analysis of the data in the framework of simple models for the microwave surface impedance in the mixed state we argue that BaZrO$_3$ inclusions determine very steep pinning potentials.
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