Strong reduction of field-dependent microwave surface resistance in YBa$_{2}$Cu$_{3}$O$_{7-delta}$ with sub-micrometric BaZrO$_3$ inclusions

We observe a strong reduction of the field induced thin film surface resistance measured at high microwave frequency ($ u=$47.7 GHz) in YBa$_{2}$Cu$_{3}$O$_{7-delta}$ thin films grown on SrTiO$_3$ substrates, as a consequence of the introduction of sub-micrometric BaZrO$_3$ particles. The field increase of the surface resistance is smaller by a factor of $sim$3 in the film with BaZrO$_3$ inclusions, while the zero-field properties are not much affected. Combining surface resistance and surface reactance data we conclude (a) that BaZrO$_3$ inclusions determine very deep and steep pinning wells and (b) that the pinning changes nature with respect to the pure film.