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Register a new userCharge-to-spin conversion of electron entanglement states and spin-interaction-free solid-state quantum computation
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Without resorting to spin-spin coupling, we propose a scalable spin quantum computing scheme assisted with a semiconductor multiple-quantum-dot structure. The techniques of single electron transitions and the nanostructure of quantum-dot cellular automata (QCA) are used to generate charge entangled states of two electrons, which are then converted into spin entanglement states using single-spin rotations only. Deterministic two-qubit quantum gates are also manipulated using only single-spin rotations with the help of QCA. A single-shot readout of spin states can be carried out by coupling the multiple dot structure to a quantum point contact. As a result, deterministic spin-interaction-free quantum computing can be implemented in semiconductor nanostructure.
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We show theoretically that conversion between spin and charge by spin-orbit interaction in metals occurs even in a non-local setup where magnetization and spin-orbit interaction are spatially separated if electron diffusion is taken into account. Calculation is carried out for the Rashba spin-orbit interaction treating the coupling with a ferromagnet perturbatively. The results indicate the validity of the concept of effective spin gauge field (spin motive force) in the non-local configuration. The inverse Rashba-Edelstein effect observed for a trilayer of a ferromagnet, a normal metal and a heavy metal can be explained in terms of the non-local effective spin gauge field.
At interfaces with inversion symmetry breaking, Rashba effect couples the motion of electrons to their spin; as a result, spin-charge interconversion mechanism can occur. These interconversion mechanisms commonly exploit Rashba spin splitting at the Fermi level by spin pumping or spin torque ferromagnetic resonance. Here, we report evidence of significant photoinduced spin to charge conversion via Rashba spin splitting in an unoccupied state above the Fermi level at the Cu(111)/$alpha$-Bi$_{2}$O$_{3}$ interface. We predict an average Rashba coefficient of $1.72times 10^{-10}eV.m$ at 1.98 eV above the Fermi level, by fully relativistic first-principles analysis of the interfacial electronic structure with spin orbit interaction. We find agreement with our observation of helicity dependent photoinduced spin to charge conversion excited at 1.96 eV at room temperature, with spin current generation of $J_{s}=10^{6}A/m^{2}$. The present letter shows evidence of efficient spin-charge conversion exploiting Rashba spin splitting at excited states, harvesting light energy without magnetic materials or external magnetic fields.
We investigate the spin-to-charge conversion emerging from a mesoscopic device connected to multiple terminals. We obtain analytical expressions to the characteristic coefficient of spin-to-charge conversion which are applied in two kinds of ballistic chaotic quantum dots at low temperature. We perform analytical diagrammatic calculations in the universal regime for two-dimensional electron gas and single-layer graphene with strong spin-orbit interaction in the universal regime. Furthermore, our analytical results are confirmed by numerical simulations. Finally, we connect our analytical finds to recent experimental measures giving a conceptual explanation about the apparent discrepancies between them.
SrTiO$_3$-based two-dimensional electron gases (2DEGs) can be formed through the deposition of epitaxial oxides like LaAlO$_3$ or of reactive metals such as Al. Such 2DEGs possess a finite Rashba spin-orbit coupling that has recently been harnessed to interconvert charge and spin currents through the direct and inverse Edelstein and spin Hall effects. Here we compare the formation and properties of 2DEGs generated in SrTiO$_3$ by the growth of Al, Ta and Y ultrathin films by magnetron sputtering. By combining in situ and ex situ X-ray photoelectron spectroscopy (XPS) we gain insight into the reduction of the SrTiO$_3$ and the appearance of Ti$^{3+}$ states associated with 2DEG formation, its reoxidation by exposure to the air, and the transformation of the metal into its binary oxides. We extract the carrier densities through magnetotransport and compare them with the XPS data. Finally, working with samples covered by an extra layer of NiFe, we perform spin-pumping ferromagnetic resonance experiments and investigate spin-charge conversion as a function of gate voltage. We identify trends in the data across the different sample systems and discuss them as a function of the carrier density and the transparency of the metal oxide tunnel barrier.
We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) {alpha}-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of {alpha}-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into {alpha}-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it.
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