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Register a new userThermal Modeling of high power LED modules
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Added by
Francoise Heres-Renzetti
Publication date
2007
fields
Physics
and research's language is
English
Authors
D. Benoy
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This paper presents a study of accuracy issues in thermal modeling of high power LED modules on system level. Both physical as well as numerical accuracy issues are addressed. Incorrect physical assumptions may result in seemingly correct, but erroneous results. It is therefore important to motivate the underlying key physical assumptions of a thermal model. In this paper thermal measurements are used to calibrate a computational fluid dynamics (CFD) model of a high power LED module model at a reference application condition, and to validate it at other application conditions.
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Light Emitting Diodes emits no IR and no UV and their spectrum is fully in the visible part. But LEDs are not cold and all energy losses are thermal losses. The aim of this paper is to prove the feasibility to reuse the thermal losses to produce light through a thermoelectric module. Papers where Peltier modules are included in LEDs systems are all the time used for cooling [1-6]. At the knowledge of the authors, this the first time that thermal losses are used to increase the global efficiency of a high power LED lighting system by using Peltier modules to produce light.
We will describe the thermal performance of power semiconductor module, which consists of hetero-junction bipolar transistors (HBTs), for mobile communication systems. We calculate the thermal resistance between the HBT fingers and the bottom surface of a multi-layer printed circuit board (PCB) using a finite element method (FEM). We applied a steady state analysis to evaluate the influence of design parameters on thermal resistance of the module. We found that the thickness of GaAs substrate, the thickness of multi-layer circuit board, the thermal conductivity of bonding material under GaAs substrate, and misalignment of thermal vias between each layer of PCB are the dominant parameter in thermal resistance of the module.
Adding thermal conductivity enhancements to increase thermal power in solid-liquid phase-change thermal energy storage modules compromises volumetric energy density and often times reduces the mass and volume of active phase change material (PCM) by well over half. In this study, a new concept of building thermal energy storage modules using high-conductivity, solid-solid, shape memory alloys is demonstrated to eliminate this trade-off and enable devices that have both high heat transfer rate and high thermal capacity. Nickel titanium, Ni50.28Ti49.36, was solution heat treated and characterized using differential scanning calorimetry and Xenon Flash to determine transformation temperature (78deg-C), latent heat (183 kJm-3), and thermal conductivity in the Austenite and Martensite phases (12.92/12.64 Wm-1K-1). Four parallel-plate thermal energy storage demonstrators were designed, fabricated, and tested in a thermofluidic test setup. These included a baseline sensible heating module (aluminum), a conventional solid-liquid PCM module (aluminum/1-octadecanol), an all-solid-solid PCM module (Ni50.28Ti49.36), and a composite solid-solid/solid-liquid PCM module (Ni50.28Ti49.36/1-octadecanol). By using high-conductivity solid-solid PCMs, and eliminating the need for encapsulants and conductivity enhancements, we are able to demonstrate a 1.73-3.38 times improvement in volumetric thermal capacity and a 2.03-3.21 times improvement in power density as compared to the conventional approaches. These experimental results are bolstered by analytical models to explain the observed heat transfer physics and reveal a 5.86 times improvement in thermal time constant. This work demonstrates the ability to build high-capacity and high-power thermal energy storage modules using multifunctional shape memory alloys and opens the door for leap ahead improvement in thermal energy storage performance.
This paper presents dynamic thermal analyses of a power amplifier. All the investigations are based on the transient junction temperature measurements performed during the circuit cooling process. The presented results include the cooling curves, the structure functions, the thermal time constant distribution and the Nyquist plot of the thermal impedance. The experiments carried out demonstrated the influence of the contact resistance and the position of the entire cooling assembly on the obtained results.
Recent reported very high thermal conductivities in the cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such application, compatible coefficient of thermal expansion (CTE) between the heat spreader and device substrate, in order to minimize the thermal stress, need to be considered. Here we report our experimental CTE studies of BAs and BP in the temperature range from 100K to 1150K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. We demonstrated the room temperature CTE, 3.6 $pm$ 0.15 $times$ 10E-6 /K for BAs and 3.2 $pm$ 0.2 $times$ 10E-6 /K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.
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