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Register a new userTemperature Dependent Polarity Reversal in Au/Nb:SrTiO3 Schottky Junctions
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We have observed temperature-dependent reversal of the rectifying polarity in Au/Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics we have found that the permittivity of SrTiO3 near the interface exhibits temperature dependence opposite to that observed in the bulk, significantly reducing the barrier width. At low temperature, tunneling current dominates the junction transport due both to such barrier narrowing and to suppressed thermal excitations. The present results demonstrate that novel junction properties can be induced by the interface permittivity.
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SrRuO3 (SRO), a conducting transition metal oxide, is commonly used for engineering domains in BiFeO3. New oxide devices can be envisioned by integrating SRO with an oxide semiconductor as Nb doped SrTiO3 (Nb:STO). Using a three-terminal device configuration, we study vertical transport in a SRO/Nb:STO device at the nanoscale and find local differences in transport, that originate due to the high selectivity of SRO growth on the underlying surface terminations in Nb:STO. This causes a change in the interface energy band characteristics and is explained by the differences in the spatial distribution of the interface-dipoles at the local Schottky interface.
Motivated by the peculiar behavior of FeSi and FeSb2 we study the effect of local electronic correlations on magnetic, transport and optical properties in a specific type of band insulator, namely a covalent insulator. Investigating a minimum model of covalent insulator within a single-site dynamical mean-field approximation we are able to obtain the crossover from low temperature non-magnetic insulator to high-temperature paramagnetic metal with parameters realistic for FeSi and FeSb2 systems. Our results show that the behavior of FeSi does not imply microscopic description in terms of Kondo insulator (periodic Anderson model) as can be often found in the literature, but in fact reflects generic properties of a broader class of materials.
We observed a strong modulation in the current-voltage characteristics of SrRuO$_3$/Nb:SrTiO$_3$ Schottky junctions by Mn substitution in SrRuO$_3$, which induces a metal-insulator transition in bulk. The temperature dependence of the junction ideality factor indicates an increased spatial inhomogeneity of the interface potential with substitution. Furthermore, negative differential resistance was observed at low temperatures, indicating the formation of a resonant state by Mn substitution. By spatially varying the position of the Mn dopants across the interface with single unit cell control, we can isolate the origin of this resonant state to the interface SrRuO$_3$ layer. These results demonstrate a conceptually different approach to controlling interface states by utilizing the highly sensitive response of conducting perovskites to impurities.
The Luttinger surface of an organic metal (TTF-TCNQ), possessing charge order and spin-charge separation, is investigated using temperature dependent angle-resolved photoemission spectroscopy. The Luttinger surface topology, obtained from momentum distribution curves, changes from quasi-2D(dimensional) to quasi-1D with temperature. The high temperature quasi-2D surface exhibits 4$k_F$ charge-density-wave (CDW) superstructure in the TCNQ derived holon band, in the absence of 2$k_F$ order. Decreasing temperature results in quasi-1D nested 2$k_F$ CDW order in the TCNQ spinon band and in the TTF surface. The results establish the link in momentum-space between charge order and spin-charge separation in a Luttinger liquid.
We demonstrate the magnetization reversal features in NiFe/IrMn/NiFe thin-film structures with 40% and 75% relative content of Ni in Permalloy in the temperature range from 80 K to 300 K. At the descending branches of the hysteresis loops, the magnetization reversal sequence of the two ferromagnetic layers is found to depend on the type of NiFe alloy. In the samples with 75% relative content of Ni, the bottom ferromagnetic layer reverses prior to the top one. On the contrary, in the samples with 40% of Ni, the top ferromagnetic layer reverses prior to the bottom one. These tendencies of magnetization reversal are preserved in the entire range of temperatures. These distinctions can be explained by the morphological and structural differences of interfaces in the samples based on two types of Permalloy.
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