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Register a new userDirect observation of quantized interlayer vortex flow and vortex pinning distribution in high-Tc La_(1.87)Sr_(0.13)CuO_4 single crystals
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A scanning superconducting quantum interference device (SQUID) microscope (SSM) is used to study the magnetic imaging of dynamic motion of quantized interlayer vortices induced by the Lorentz force in anisotropic high-Tc La_(1.87)Sr_(0.13)CuO_4 single crystals. It is found that 3 modes of flux motion switch depending on the transport current. By increasing the current a transition from the creep-like behavior of vortices to a steady flow of vortices was observed. Even higher current induced a continuous expansion of vortex-flow area indicating an inhomogeneous distribution of various pinning centers.
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We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe2(As1-xPx)2. Proceeding from optimal doped to ovedoped samples, we find a clear transfor- mation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect followed by a reversible magnetization and Bean Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in these materials.
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Demanding microwave applications in a magnetic field require the material optimization not only in zero-field but, more important, in the in-field flux motion dominated regime. However, the effect of artificial pinning centers (APC) remains unclear at high frequency. Moreover, in coated conductors the evaluation of the high frequency material properties is difficult due to the complicated electromagnetic problem of a thin superconducting film on a buffered metal substrate. In this paper we present an experimental study at 48 GHz of 150-200 nm YBa$_2$Cu$_3$O$_{7-x}$ coated conductors, with and without APCs, on buffered Ni-5at%W tapes. By properly addressing the electromagnetic problem of the extraction of the superconductor parameters from the measured overall surface impedance $Z$, we are able to extract and to comment on the London penetration depth, the flux flow resistivity and the pinning constant, highlighting the effect of artificial pinning centers in these samples.
$mathrm{La_{1.85}Sr_{0.15}CuO_4}$/$mathrm{La_2CuO_4}$ (LSCO15/LCO) bilayers with a precisely controlled thickness of N unit cells (UCs) of the former and M UCs of the latter ([LSCO15_N/LCO_M]) were grown on (001)-oriented {slao} (SLAO) substrates with pulsed laser deposition (PLD). X-ray diffraction and reciprocal space map (RSM) studies confirmed the epitaxial growth of the bilayers and showed that a [LSCO15_2/LCO_2] bilayer is fully strained, whereas a [LSCO15_2/LCO_7] bilayer is already partially relaxed. The textit{in situ} monitoring of the growth with reflection high energy electron diffraction (RHEED) revealed that the gas environment during deposition has a surprisingly strong effect on the growth mode and thus on the amount of disorder in the first UC of LSCO15 (or the first two monolayers of LSCO15 containing one $mathrm{CuO_2}$ plane each). For samples grown in pure $mathrm{N_2O}$ gas (growth type-B), the first LSCO15 UC next to the SLAO substrate is strongly disordered. This disorder is strongly reduced if the growth is performed in a mixture of $mathrm{N_2O}$ and $mathrm{O_2}$ gas (growth type-A). Electric transport measurements confirmed that the first UC of LSCO15 next to the SLAO substrate is highly resistive and shows no sign of superconductivity for growth type-B, whereas it is superconducting for growth type-A. Furthermore, we found, rather surprisingly, that the conductivity of the LSCO15 UC next to the LCO capping layer strongly depends on the thickness of the latter. A LCO capping layer with 7~UCs leads to a strong localization of the charge carriers in the adjacent LSCO15 UC and suppresses superconductivity. The magneto-transport data suggest a similarity with the case of weakly hole doped LSCO single crystals that are in a so-called {{cluster-spin-glass state}}
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