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Register a new userSurface versus bulk characterization of the electronic inhomogeneity in a VO_{2} film
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We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT, we used bulk-sensitive X-ray diffraction (XRD) measurements to estimate the fraction of metallic volume p^{XRD} in our VO_{2} film. The temperature dependence of the p$^{XRD}$ was very closely correlated with the dc conductivity near the MIT temperature, and fit the percolation theory predictions quite well: $sigma$ $sim$ (p - p_{c})^{t} with t = 2.0$pm$0.1 and p_{c} = 0.16$pm$0.01. This agreement demonstrates that in our VO$_{2}$ thin film, the MIT should occur during the percolation process. We also used surface-sensitive scanning tunneling spectroscopy (STS) to investigate the microscopic evolution of the MIT near the surface. Similar to the XRD results, STS maps revealed a systematic decrease in the metallic phase as temperature decreased. However, this rate of change was much slower than the rate observed with XRD, indicating that the electronic inhomogeneity near the surface differs greatly from that inside the film. We investigated several possible origins of this discrepancy, and postulated that the variety in the strain states near the surface plays an important role in the broad MIT observed using STS. We also explored the possible involvement of such strain effects in other correlated electron oxide systems with strong electron-lattice interactions.
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We have observed the spatial inhomogeneity of the electronic structure of a single-crystalline electron-doped EuO thin film with ferromagnetic ordering by employing infrared magneto-optical imaging with synchrotron radiation. The uniform paramagnetic electronic structure changes to a uniform ferromagnetic structure via an inhomogeneous state with decreasing temperature and increasing magnetic field slightly above the ordering temperature. One possibility of the origin of the inhomogeneity is the appearance of magnetic polaron states.
Combining first-principles calculations with a technique for many-body problems, we investigate properties of the transition metal oxide ${rm Sr_{2}VO_{4}}$ from the microscopic point of view. By using the local density approximation (LDA), the high-energy band structure is obtained, while screened Coulomb interactions are derived from the constrained LDA and the GW method. The renormalization of the kinetic energy is determined from the GW method. By these downfolding procedures, an effective Hamiltonian at low energies is derived. Applying the path integral renormalization group method to this Hamiltonian, we obtain ground state properties such as the magnetic and orbital orders. Obtained results are consistent with experiments within available data. We find that ${rm Sr_{2}VO_{4}}$ is close to the metal-insulator transition. Furthermore, because of the coexistence and competition of ferromagnetic and antiferromgnetic exchange interactions in this system, an antiferromagnetic and orbital-ordered state with a nontrivial and large unit cell structure is predicted in the ground state. The calculated optical conductivity shows characteristic shoulder structure in agreement with the experimental results. This suggests an orbital selective reduction of the Mott gap.
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