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Register a new userDynamics of Quantum Noise in a Tunnel Junction under ac Excitation
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We report the first measurement of the emph{dynamical response} of shot noise (measured at frequency $omega$) of a tunnel junction to an ac excitation at frequency $omega_0$. The experiment is performed in the quantum regime, $hbaromegasimhbaromega_0gg k_BT$ at very low temperature T=35mK and high frequency $omega_0/2pi=6.2$ GHz. We observe that the noise responds in phase with the excitation, but not adiabatically. The results are in very good agreement with a prediction based on a new current-current correlator.
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The non-symmetrized current noise is crucial for the analysis of light emission in nanojunctions. The latter represent non-classical photon emitters whose description requires a full quantum approach. It was found experimentally that light emission can occur with a photon energy exceeding the applied dc voltage, which intuitively should be forbidden due to the Pauli principle. This overbias light emission cannot be described by the single-electron physics, but can be explained by two-electron or even three-electron processes, correlated by a local resonant mode in analogy to the well-known dynamical Coulomb blockade (DCB). Here, we obtain the non-symmetrized noise for junctions driven by an arbitrarily shaped periodic voltage. We find that when the junction is driven, the overbias light emission exhibits intriguingly different features compared to the dc case. In addition to kinks at multiples of the bias voltage, side kinks appear at integer multiples of the ac driving frequency. Our work generalizes the DCB theory of light emission to driven tunnel junctions and opens the avenue for engineered quantum light sources, which can be tuned purely by applied voltages.
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions show clear anomalies at specific applied voltages, reflecting electron tunneling to the band edges of the magnetic electrodes. The change in magnitude of these noise anomalies with the magnetic state allows evaluating the degree of spin mixing between the spin polarized bands at the ferromagnet/insulator interface. Our results are in qualitative agreement with numerical calculations.
We consider the coupling of a single mode microwave resonator to a tunnel junction whose contacts are at thermal equilibrium. We derive the quantum master equation describing the evolution of the resonator field in the strong coupling regime, where the characteristic impedance of the resonator is larger than the quantum of resistance. We first study the case of a normal-insulator-normal junction and show that a dc driven single photon source can be obtained. We then consider the case of a superconductor-insulator-normal and superconductor-insulator-superconductor junction. There, we show that the Lamb shift induced by the junction gives rise to a nonlinear spectrum of the resonator even when the junction induced losses are negligible. We discuss the resulting dynamics and consider possible applications including quantum Zeno dynamics and the realization of a qubit.
The transport properties of a simple model for a finite level structure (a molecule or a dot) connected to metal electrodes in an alternating current scanning tunneling microscope (AC-STM) configuration is studied. The finite level structure is assumed to have strong binding properties with the metallic substrate, and the bias between the STM tip and the hybrid metal-molecule interface has both an AC and a DC component. The finite frequency current response and the zero frequency photo-assisted shot noise are computed using the Keldysh technique, and examples for a single site molecule (a quantum dot) and for a two-site molecule are examined. The model may be useful for the interpretation of recent experiments using an AC-STM for the study of both conducting and insulating surfaces, where the third harmonic component of the current is measured. The zero frequency photo-assisted shot noise serves as a useful diagnosis for analyzing the energy level structure of the molecule. The present work motivates the need for further analysis of current fluctuations in electronic molecular transport.
We derive fluctuation-dissipation relations for a tunnel junction driven by a high impedance microwave resonator, displaying strong quantum fluctuations. We find that the fluctuation-dissipation relations derived for classical forces hold, provided the effect of the circuits quantum fluctuations is incorporated into a modified non-linear $I(V)$ curve. We also demonstrate that all quantities measured under a coherent time dependent bias can be reconstructed from their dc counterpart with a photo-assisted tunneling relation. We confirm these predictions by implementing the circuit and measuring the dc current through the junction, its high frequency admittance and its current noise at the frequency of the resonator.
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