No Arabic abstract
In recent years, there has been increasing interest in the specific heat $C$ of insulators and semiconductors because of the availability of samples with different isotopic masses and the possibility of performing textit{ab initio} calculations of its temperature dependence $C(T)$ using as a starting point the electronic band structure. Most of the crystals investigated are elemental (e.g., germanium) or binary (e.g., gallium nitride) semiconductors. The initial electronic calculations were performed in the local density approximation and did not include spin-orbit interaction. Agreement between experimental and calculated results was usually found to be good, except for crystals containing heavy atoms (e.g., PbS) for which discrepancies of the order of 20% existed at the low temperature maximum found for $C/T^3$. It has been conjectured that this discrepancies result from the neglect of spin-orbit interaction which is large for heavy atoms ($Delta_0sim$1.3eV for the $p$ valence electrons of atomic lead). Here we discuss measurements and textit{ab initio} calculations of $C(T)$ for crystalline bismuth ($Delta_0sim$1.7 eV), strictly speaking a semimetal but in the temperature region accessible to us ($T >$ 2K) acting as a semiconductor. We extend experimental data available in the literature and notice that the textit{ab initio} calculations without spin-orbit interaction exhibit a maximum at $sim$8K, about 20% lower than the measured one. Inclusion of spin-orbit interaction decreases the discrepancy markedly: The maximum of $C(T)$ is now only 7% larger than the measured one. Exact agreement is obtained if the spin-orbit hamiltonian is reduced by a factor of $sim$0.8.
The spin-orbit interaction can cause a nonvanishing density of states (DOS) within the minority-spin band gap of half-metals around the Fermi level. We examine the magnitude of the effect in Heusler alloys, zinc-blende half metals and diluted magnetic semiconductors, using first-principles calculations. We find that the ratio of spin-down to spin-up DOS at the Fermi level can range from below 1% (e.g. 0.5% for NiMnSb) over several percents (4.2% for (Ga,Mn)As) to 13% for MnBi.
Thermoelectric properties of graphene nanoribbons with periodic edge vacancies and antidot lattice are investigated. The electron-phonon interaction is taken into account in the framework of the Hubbard-Holstein model with the use of the Lang-Firsov unitary transformation scheme. The electron transmission function, the thermopower and the thermoelectric figure of merit are calculated. We have found that the electron-phonon interaction causes a decrease in the peak values of the thermoelectric figure of merit and the shift of the peak positions closer to the center of the bandgap. The effects are more pronounced for the secondary peaks that appear in the structures with periodic antidot.
Direct visualizations of spin accumulation due to the enhanced spin Hall effect (SHE) in bismuth (Bi) - doped silicon (Si) at room temperature are realized by using helicity-dependent photovoltage (HDP) measurements. Under application of a dc current to the Bi-doped Si, clear helicity-dependent photovoltages are detected at the edges of the Si channel, indicating a perpendicular spin accumulation due to the SHE. In contrast, the HDP signals are negligibly small for phosphorus-doped Si. Compared to a platinum channel, which has a large spin Hall angle, more than two-orders of magnitude larger HDP signals are obtained in the Bi-doped Si.
Using ferromagnetic-resonance spectroscopy (FMR), we investigate the anisotropic properties of epitaxial 3 nmPt/2 nmAg/10 nmFe/10 nmAg/GaAs(001) films in fully saturated meta-stable states at temperatures ranging from 70 K to 280 K. By comparison to spin-wave theory calculations, we identify the role of thermal fluctuation of magnons in overcoming the energy barrier associated with these meta-stable states. We show that the energy associated with the size of the barrier that bounds the meta-stable regime is proportional to the heat stored in the magnonic bath. Our findings offer the possibility to measure the magnonic contribution to the heat capacity by FMR, independent of other contributions at temperatures ranging from 0 K to ambient temperature and above. The only requirement being that the selected sample exhibits magnetic anisotropy, here, magnetocrystalline anisotropy.
The photonic spin Hall effect (SHE) can be regarded as a direct optical analogy of the SHE in electronic systems where a refractive index gradient plays the role of electric potential. However, it has been demonstrated that the effective refractive index fails to adequately explain the lightmatter interaction in atomically thin crystals. In this paper, we examine the spin-orbit interaction on the surface of the freestanding atomically thin crystals. We find that it is not necessary to involve the effective refractive index to describe the spin-orbit interaction and the photonic SHE in the atomically thin crystals. The strong spin-orbit interaction and giant photonic SHE have been predicted, which can be explained as the large polarization rotation of plane-wave components in order to satisfy the transversality of photon.