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Register a new userScaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs
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We compare experimental resistivity data on Ga_{1-x}Mn_xAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. All characteristic features of the temperature dependence of the resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. In particular, we find that the magnetic field induced changes in resistance cannot be explained within a mean-field treatment of the magnetic state, and that accounting for thermal fluctuations is crucial for a quantitative analysis. Similarly, while the non-interacting scaling theory is in reasonable agreement with the data, we find clear evidence in favor of interaction effects at low temperatures.
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We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used, in which the hole concentration p(x) is parametrized in terms of a fitting (of the hole effective mass and hole/local moment coupling) to experimental data on the Tc critical temperature. The dependence of the magnetizations with x, for a given temperature, presents a sharply peaked structure, with maxima increasing with applied magnetic field, which indicates that application to diluted-magnetic-semiconductor devices would require quality-control of the Mn-doping composition. We also compare various experimental data for Tc(x) and p(x) on different Ga_{1-x}Mn_xAs samples and stress the need of further detailed experimental work to assure that the experimental measurements are reproducible.
We have undertaken a study of diluted magnetic semiconductors $Ga_{1-x}Mn_{x}N$ and $Ga_{1-x}Cr_{x}N$ with $x=0.0625, 0.125$, using the all electron linearized augmented plane wave method (LAPW) for different configurations of Mn as well as Cr. We study four possible configurations of the impurity in the wurtzite GaN structure to predict energetically most favorable structure within the 32 atom supercell and conclude that the near-neighbor configuration has the lowest energy. We have also analyzed the ferro-magnetic as well as anti-ferromagnetic configurations of the impurity atoms. The density of states as well as bandstructure indicate half metallic state for all the systems. $T_c$ has also been estimated for the above systems.
We present a time-resolved optical study of the dynamics of carriers and phonons in Ga_{1-x}Mn_{x}As layers for a series of Mn and hole concentrations. While band filling is the dominant effect in transient optical absorption in low-temperature-grown (LT) GaAs, band gap renormalization effects become important with increasing Mn concentration in Ga_{1-x}Mn_{x}As, as inferred from the sign of the absorption change. We also report direct observation on lattice vibrations in Ga1-xMnxAs layers via reflective electro-optic sampling technique. The data show increasingly fast dephasing of LO phonon oscillations for samples with increasing Mn and hole concentration, which can be understood in term of phonon scattering by the holes.
The low temperature heat capacity C_{p} of Fe_{1-x}Ga_{x} alloys with large magnetostriction has been investigated. The data were analyzed in the standard way using electron ($gamma T$) and phonon ($beta T^{3}$) contributions. The Debye temperature $Theta_{D}$ decreases approximately linearly with increasing Ga concentration, consistent with previous resonant ultrasound measurements and measured phonon dispersion curves. Calculations of $Theta_{D}$ from lattice dynamical models and from measured elastic constants C_{11}, C_{12} and C_{44} are in agreement with the measured data. The linear coefficient of electronic specific heat $gamma$ remains relatively constant as the Ga concentration increases, despite the fact that the magnetoelastic coupling increases. Band structure calculations show that this is due to the compensation of majority and minority spin states at the Fermi level.
Theories of the strange metal, the parent state of many high temperature superconductors, invariably involve an important role for correlations in the spin and charge degrees of freedom. The most distinctive signature of this state in the charge transport sector is a resistance that varies linearly in temperature, but this phenomenon does not clearly point to one mechanism as temperature is a scalar quantity that influences every possible mechanism for momentum relaxation. In a previous work we identified an unusual scaling relationship between magnetic field and temperature in the in-plane resistivity of the unconventional superconductor BaFe$_2$(As$_{1-x}$P$_{x}$)$_2$, providing an opportunity to use the vector nature of the magnetic field to acquire additional clues about the mechanisms responsible for scattering in the strange metal state. Here we extend this work by investigating other components of the conductivity tensor under different orientations of the magnetic field. We find that the scaling phenomenon involves only the out-of-plane component of the magnetic field and is, strikingly, independent of the direction of the applied current. This suggests that the origin of the strange magnetotransport is in the action of the magnetic field on the correlated behavior of spin and charge degrees of freedom, rather than on the simple cyclotron motion of individual quasiparticles.
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