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Microfabrication of graphene devices used in many experimental studies currently relies on the fact that graphene crystallites can be visualized using optical microscopy if prepared on top of silicon wafers with a certain thickness of silicon dioxide. We study graphenes visibility and show that it depends strongly on both thickness of silicon dioxide and light wavelength. We have found that by using monochromatic illumination, graphene can be isolated for any silicon dioxide thickness, albeit 300 nm (the current standard) and, especially, approx. 100 nm are most suitable for its visual detection. By using a Fresnel-law-based model, we quantitatively describe the experimental data without any fitting parameters.
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Fast modulation and switching of light at visible and near-infrared (vis-NIR) frequencies is of utmost importance for optical signal processing and sensing technologies. No fundamental limit appears to prevent us from designing wavelength-sized devices capable of controlling the light phase and intensity at gigaherts (and even terahertz) speeds in those spectral ranges. However, this problem remains largely unsolved, despite recent advances in the use of quantum wells and phase-change materials for that purpose. Here, we explore an alternative solution based upon the remarkable electro-optical properties of graphene. In particular, we predict unity-order changes in the transmission and absorption of vis-NIR light produced upon electrical doping of graphene sheets coupled to realistically engineered optical cavities. The light intensity is enhanced at the graphene plane, and so is its absorption, which can be switched and modulated via Pauli blocking through varying the level of doping. Specifically, we explore dielectric planar cavities operating under either tunneling or Fabry-Perot resonant transmission conditions, as well as Mie modes in silicon nanospheres and lattice resonances in metal particle arrays. Our simulations reveal absolute variations in transmission exceeding 90% as well as an extinction ratio >15 dB with small insertion losses using feasible material parameters, thus supporting the application of graphene in fast electro-optics at vis-NIR frequencies.
Defects in graphene are of crucial importance for its electronic and magnetic properties. Here impurity effects on the electronic structure of surrounding carbon atoms are considered and the distribution of the local densities of states (LDOS) is calculated. As the full range from near field to the asymptotic regime is covered, our results are directly accessible by scanning tunnelling microscopy (STM). We also include exchange scattering at magnetic impurities and eludicate how strongly spin polarized impurity states arise.
Brillouin light spectroscopy is a powerful and robust technique for measuring the interfacial Dzyaloshinskii-Moriya interaction in thin films with broken inversion symmetry. Here we show that the magnon visibility, i.e. the intensity of the inelastically scattered light, strongly depends on the thickness of the dielectric seed material - SiO$_2$. By using both, analytical thin-film optics and numerical calculations, we reproduce the experimental data. We therefore provide a guideline for the maximization of the signal by adapting the substrate properties to the geometry of the measurement. Such a boost-up of the signal eases the magnon visualization in ultrathin magnetic films, speeds-up the measurement and increases the reliability of the data.
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field $B$ applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B = 0 and B = 2 T shows a 20 % decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin orbit effective fields in the in-plane and out-of-plane directions.
Thanks to the recent discovery on the magic-angle bilayer graphene, twistronics is quickly becom11 ing a burgeoning field in condensed matter physics. This letter expands the realm of twistronics to acoustics by introducing twisted bilayer phononic graphene, which remarkably also harbors the magic angle, evidenced by the associated ultra-flat bands. Beyond mimicking quantum mechanical behaviors of twisted bilayer graphene, we show that their acoustic counterpart offers a considerably more straightforward and robust way to alter the interlayer hopping strength, enabling us to unlock magic angles (> 3 degrees) inaccessible in classical twisted bilayer graphene. This study, not only establishes the acoustical analog of twisted (magic-angle) bilayer graphene, providing a testbed more easily accessible to probe the interaction and misalignment between stacked 2D materials, but also points out the direction to a new phononic crystal design paradigm that could benefit applications such as enhanced acoustic emission and sensing.
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