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Register a new userEffect of the Spatial Dispersion on the Shape of a Light Pulse in a Quantum Well
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Reflectance, transmittance and absorbance of a symmetric light pulse, the carrying frequency of which is close to the frequency of interband transitions in a quantum well, are calculated. Energy levels of the quantum well are assumed discrete, and two closely located excited levels are taken into account. A wide quantum well (the width of which is comparable to the length of the light wave, corresponding to the pulse carrying frequency) is considered, and the dependance of the interband matrix element of the momentum operator on the light wave vector is taken into account. Refractive indices of barriers and quantum well are assumed equal each other. The problem is solved for an arbitrary ratio of radiative and nonradiative lifetimes of electronic excitations. It is shown that the spatial dispersion essentially affects the shapes of reflected and transmitted pulses. The largest changes occur when the radiative broadening is close to the difference of frequencies of interband transitions taken into account.
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Reflectance, transmittance and absorbance of a symmetric light pulse, the carrying frequency of which is close to the frequency of interband transitions in a quantum well, are calculated. Energy levels of the quantum well are assumed discrete, and two closely located excited levels are taken into account. The theory is applicable for the quantum wells of arbitrary widths when the size quantization is preserved. A distinction of refraction indices of barriers and quantum well is taken into account. In such a case, some additional reflection from the quantum well borders appears which changes essentially a shape of the reflected pulse in comparison to homogeneous medium. The reflection from the borders disappears at some definite ratios of the carrying frequency of the stimulating pulse and quantum well width.
Light reflection and absorption spectra by a semiconductor quantum well (QW) , which width is comparable to a light wave length of stimulating radiation, are calculated. A resonance with two close located exited levels is considered. These levels can arise due to splitting of an energy level of an electron-hole pair (EHP) due to magnetopolaron effect, if the QW is in a quantizing magnetic field directed perpendicularly to the QW plane. It is shown that unlike a case of narrow QWs light reflection and absorption depend on a QW width $d$. The theory is applicable at any ratio of radiative and non-radiative broadenings of electronic excitations.
We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly proportional to the dressing field. This scheme is tunable, compact, and shows a fair efficiency.
The influence of e-h scattering on the conductivity and magnetotransport of 2D semimetallic HgTe is studied both theoretically and experimentally. The presence of e-h scattering leads to the friction between electron and holes resulting in a large temperature-dependent contribution to the transport coefficients. The coefficient of friction between electrons and holes is determined. The comparison of experimental data with the theory shows that the interaction between electrons and holes based on the long - range Coulomb potential strongly underestimates the e-h friction. The experimental results are in agreement with the model of strong short-range e-h interaction.
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.
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