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Register a new userShaped angular dependence of the spin transfer torque and microwave generation without magnetic field
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The generation of oscillations in the microwave frequency range is one of the most important applications expected from spintronics devices exploiting the spin transfer phenomenon. We report transport and microwave power measurements on specially designed nanopillars for which a non-standard angular dependence of the spin transfer torque (wavy variation) is predicted by theoretical models. We observe a new kind of current-induced dynamics that is characterized by large angle precessions in the absence of any applied field, as this is also predicted by simulation with such a wavy angular dependence of the torque. This type of non-standard nanopillars can represent an interesting way for the implementation of spin transfer oscillators since they are able to generate microwave oscillations without applied magnetic field. We also emphasize the theoretical implications of our results on the angular dependence of the torque.
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The spin transfer torque (STT) can lead to steady precession of magnetization without any external applied field in magnetic spin valve where the magnetic layer have very different spin diffusion length. This effect is associated with an unusual angular dependence of the STT, called wavy (WAD-STT), predicted in the frame of diffusive models of spin transfer. In this article, we present a complete experimental characterization of the magnetization dynamics in the presence of a WAD-STT. The results are compared to the prediction of the magnetization dynamics obtained by single domain magnetic simulations (macrospin approximation). The macrospin simulations well reproduced the main static and dynamical experimental features (phase diagram, R(I) curves, dependence of frequency with current and field) and suggest that the dynamical excitations observed experimentally are associated with a large angle out-of-plane precession mode. The present work validates the diffusive models of the spin transfer and underlines the role of the spin accumulation and the spin relaxation effects on the STT.
We theoretically study the influence of a predominant field-like spin-orbit torque on the magnetization switching of small devices with a uniform magnetization. We show that for a certain range of ratios (0.23-0.55) of the Slonczewski to the field-like torques, it is possible to deterministically switch the magnetization without requiring any external assist field. A precise control of the pulse length is not necessary, but the pulse edge sharpness is critical. The proposed switching scheme is numerically verified to be effective in devices by micromagnetic simulations. Switching without any external assist field is of great interest for the application of spin-orbit torques to magnetic memories.
We analyse the effect of the applied field (Happl) on the current-driven magnetization reversal in pillar-shaped Co/Cu/Co trilayers, where we observe two different types of transition between the parallel (P) and antiparallel (AP) magnetic configurations of the Co layers. If Happl is weaker than a rather small threshold value, the transitions between P and AP are irreversible and relatively sharp. For Happl exceding the threshold value, the same transitions are progressive and reversible. We show that the criteria for the stability of the P and AP states and the experimentally observed behavior can be precisely accounted for by introducing the current-induced torque of the spin transfer models in a Landau-Lifschitz-Gilbert equation. This approach also provides a good description for the field dependence of the critical currents.
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process consisting of a domain nucleation time and propagation time, which have different genesis, timescales, and statistical distributions compared to STT switching. We further show that the combination of SOT, STT, and voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-ns switching with a spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT, and VCMA in determining the switching speed and efficiency of MTJ devices.
The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the reduced non-linearities compared to the uniform magnetization case, we first observe a linear decrease of linewidth with decreasing temperature. However, this expected behavior no longer applies at lower temperature and a bottom limit of the linewidth is measured.
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