No Arabic abstract
We present measurements of the infrared response of the quasi-one-dimensional organic conductor (TMTSF)2$SO3 along (E||a) and perpendicular (E||b) to the stacking axis as a function of temperature. Above the metal-insulator transition related to the anion ordering the optical conductivity spectra show a Drude-like response. Below the transition an energy gap of about 1500 cm-1 (185 meV) opens, leading to the corresponding charge transfer band in the optical conductivity spectra. The analysis of the infrared-active vibrations gives evidence for the long-range crystal structure modulation below the transition temperature and for the short-range order fluctuations of the lattice modulation above the transition temperature. Also we report about a new infrared mode at around 710 cm-1 with a peculiar temperature behavior, which has so far not been observed in any other (TMTSF)2X salt showing a metal-insulator transition. A qualitative model based on the coupling between the TMTSF molecule vibration and the reorientation of electrical dipole moment of the FSO3 anion is proposed, in order to explain the anomalous behavior of the new mode.
The organic charge-transfer salt $kappa$-(BEDT-TTF)$_{2}$Hg(SCN)$_{2}$Br is a quasi two-dimensional metal with a half-filled conduction band at ambient conditions. When cooled below $T=80$ K it undergoes a pronounced transition to an insulating phase where the resistivity increases many orders of magnitude. In order to elucidate the nature of this metal-insulator transition we have performed comprehensive transport, dielectric and optical investigations. The findings are compared with other dimerized $kappa$-(BEDT-TTF) salts, in particular the Cl-analogue, where a charge-order transition takes place at $T_{rm CO}=30$ K.
Oxides RNiO3 (R = rare-earth, R # La) exhibit a metal-insulator (MI) transition at a temperature TMI and an antiferromagnetic (AF) transition at TN. Specific heat (CP) and anelastic spectroscopy measurements were performed in samples of Nd1-xEuxNiO3, 0 <= x <= 0.35. For x = 0, a peak in CP is observed upon cooling and warming at essentially the same temperature TMI = TN ~ 195 K, although the cooling peak is much smaller. For x >= 0.25, differences between cooling and warming curves are negligible, and two well defined peaks are clearly observed: one at lower temperatures, that define TN, and the other one at TMI. An external magnetic field of 9 T had no significant effect on these results. The elastic compliance (s) and the reciprocal of the mechanical quality factor (Q^-1) of NdNiO3, measured upon warming, showed a very sharp peak at essentially the same temperature obtained from CP, and no peak is observed upon cooling. The elastic modulus hardens below TMI much more sharply upon warming, while the cooling and warming curves are reproducible above TMI. On the other hand, for the sample with x = 0.35, s and Q^-1 curves are very similar upon warming and cooling. The results presented here give credence to the proposition that the MI phase transition changes from first to second order with increasing Eu doping.
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator transition (MIT): the single-parameter scaling of conductivity with temperature near a critical electron density. We obtain the scaling function $beta$, which determines the length (or temperature) dependence of the conductance. $beta$ is smooth and monotonic, and linear in the logarithm of the conductance near the MIT, in agreement with the scaling theory for interacting systems.
We investigated the effect of magnetic field on the highly correlated metal near the Mott transition in the quasi-two-dimensional layered organic conductor, $kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, by the resistance measurements under control of temperature, pressure, and magnetic field. It was demonstrated that the marginal metallic phase near the Mott transition is susceptible to the field-induced localization transition of the first order, as was predicted theoretically. The thermodynamic consideration of the present results gives a conceptual pressure-field phase diagram of the Mott transition at low temperatures.
Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.