Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.
Low frequency noise in current biased La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ single crystals has been investigated in a wide temperature range from 79 K to 290 K. Despite pronounced changes in magnetic properties and dissipation mechanisms of the sample with changing temperature, the noise spectra were found to be always of the 1/f type and their intensity (except the lowest temperature studied) scaled as a square of the bias. At liquid nitrogen temperatures and under bias exceeding some threshold value, the behavior of the noise deviates from the quasi-equilibrium modulation noise and starts to depend in a non monotonic way on bias. It has been verified that the observed noise obeys Dutta and Horn model of 1/f noise in solids. The appearance of nonequilibrium 1/f noise and its dependence on bias have been associated with changes in the distribution of activation energies in the underlying energy landscape. These changes have been correlated with bias induced changes in the intrinsic tunneling mechanism dominating dissipation in La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ at low temperatures.
We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of the Al surface. In the superconducting state these devices have revealed a strong subgap current leakage. Analyzing Cooper-pair and quasiparticle currents across the devices, we conclude that the strong suppression of the subgap resistance comparing with conventional tunnel junctions originates from a universal bimodal distribution of transparencies across the Al-oxide barrier proposed earlier by Schep and Bauer. We suggest a simple physical explanation of its source in the nanometer-thick oxide films relating it to strong local barrier-height fluctuations which are generated by oxygen vacancies in thin aluminum oxide tunnel barriers formed by thermal oxidation.
Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.
