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The temperature and field dependences of the trapped magnetic fields and of the frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-based magnetron films are investigated. It is found that in the resistive transition region of granular Bi-HTSC the trapped magnetic fields become highly inhomogeneous and alternating in sign at scale of less than 50 microns. Unlike ceramic the films have critical temperature of trapping lower than the upper temperature of magnetoresistance disappearance. The experimental results are explained by a model in which the magnetic fields are trapped in superconducting loops embedded in Josephson weak links medium. The loops nature which is essentially different for films and ceramics is discussed. Observed temperature and field dependences of trapped field are in good agreement with those calculated for normal law of the loops distribution on critical fields.
Magnetoresistive properties of granular Bi-based HTSC with trapped magnetic fields are investigated in the temperature region near superconducting transition . The effect of trapped field and transport current values and orientations on the field dep
Surface distributions of two level system (TLS) defects and magnetic vortices are limiting dissipation sources in superconducting quantum circuits. Arrays of flux-trapping holes are commonly used to eliminate loss due to magnetic vortices, but may in
Larkin and Ovchinnikov established that the viscous flow of magnetic flux quanta in current-biased superconductor films placed in a perpendicular magnetic field can lose stability due to a decrease in the vortex viscosity coefficient $eta$ with incre
The magnetic moment in the superconducting and normal state of a crystalline FeTe0.65Se0.35 superconductor, grown by the Bridgmans method with relatively high growth rate, was measured. The temperature and magnetic field dependences of magnetization
The magnetic field dependence of the superconductivity in nanocrystalline boron doped diamond thin films is reported. Evidence of a glass state in the phase diagram is presented, as demonstrated by electrical resistance and magnetic relaxation measur