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An antiferromagnetic domain wall in a thermal gradient is found to experience a force towards colder regions upon the application of a uniform magnetic field along the easy axis. This force increases with the strength of the applied field and, for sufficiently high values, it overcomes the entropic force the that pushes wall towards the hotter regions. The force is proportional to the thermal gradient and it shows a linear dependence with the net magnetic moment of the domain wall induced by the field. The origin of this force lies on the increase of the domain wall reflectivity due the field-induced sizable break of antiferromagnetic order inside it, which turns it into an efficient barrier for magnons, which transfer linear momentum to the domain wall when they are reflected on it
Antiferromagnets offer remarkable promise for future spintronics devices, where antiferromagnetic order is exploited to encode information. The control and understanding of antiferromagnetic domain walls (DWs) - the interfaces between domains with di
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especial
We investigate magnetic domain walls in a single fcc Mn layer on Re(0001) employing spin-polarized STM, atom manipulation, and spin dynamics simulations. The low symmetry of the row-wise antiferromagnetic (1Q) state leads to a new type of domain wall
We consider a domain wall in the mesoscopic quasi-one-dimensional sample (wire or stripe) of weakly anisotropic two-sublattice antiferromagnet, and estimate the probability of tunneling between two domain wall states with different chirality. Topolog
The control of domain walls is central to nearly all magnetic technologies, particularly for information storage and spintronics. Creative attempts to increase storage density need to overcome volatility due to thermal fluctuations of nanoscopic doma