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تسجيل مستخدم جديدThermally assisted domain wall nucleation in perpendicular anisotropy trilayer nanowires
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We study thermally assisted domain wall generation in perpendicular magnetic anisotropy CoFeB trilayer nanowires by the effect of Joule heating. The anomalous Hall effect is utilized to detect magnetization reversal in order to study the domain wall generation. We observe a statistical distribution in the switching process which is consistent with the thermal activation process. Our results show that the proposed method provides an efficient way for generating domain walls in perpendicular magnetic nanowires at predefined locations.
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Interactions between pairs of magnetic domain walls (DW) and pinning by radial constrictions were studied in cylindrical nanowires with surface roughness. It was found that a radial constriction creates a symmetric pinning potential well, with a chan
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We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching process,
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We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite
consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.
We combine magneto-optical imaging and a magnetic field pulse technique to study domain wall dynamics in a ferromagnetic (Ga,Mn)As layer with perpendicular easy axis. Contrary to ultrathin metallic layers, the depinning field is found to be smaller t
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