ترغب بنشر مسار تعليمي؟ اضغط هنا

Reentrant topological phases in Mn-doped HgTe quantum wells

165   0   0.0 ( 0 )
 نشر من قبل W. Beugeling
 تاريخ النشر 2012
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model.



قيم البحث

اقرأ أيضاً

Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to p-type co nductance: A very small magnetic field of approximately 70 mT is sufficient to induce a transition into the nu = -1 quantum Hall state, which extends up to at least 10 Tesla. The onset field value remains constant for a unexpectedly wide gate-voltage range. Based on temperature and angle-dependent magnetic field measurements we show that the unusual behavior results from the realization of the quantum anomalous Hall state in these magnetically doped QWs.
157 - B. Wittmann , R. Ravash , H. Diehl 2007
We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.
172 - Markus Koenig 2007
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures with low density and high mobility in which we can tune, through an external gate voltage, the carrier conduction from n-type to the p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e^2/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nm, is also independently determined from the magnetic field induced insulator to metal transition. These observations provide experimental evidence of the quantum spin Hall effect.
We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and up per valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells.
Quantum wells (QWs) based on mercury telluride (HgTe) thin films provide a large scale of unusual physical properties starting from an insulator via a two-dimensional Dirac semimetal to a three-dimensional topological insulator. These properties resu lt from the dramatic change of the QW band structure with the HgTe film thickness. Although being a key property, these energy dispersion relations cannot be reflected in experiments due to the lack of appropriate tools. Here we report an experimental and theoretical study of two HgTe quantum wells with inverted energy spectrum in which two-dimensional semimetallic states are realized. Using magneto-optical spectroscopy at sub-THz frequencies we were able to obtain information about electron and hole cyclotron masses at all relevant Fermi level positions and different charge densities. The outcome is also supported by a Shubnikov-de Haas analysis of capacitance measurements, which allows obtaining information about the degeneracy of the active modes. From these data, it is possible to reconstruct electron and hole dispersion relations. Detailed comparative analysis of the energy dispersion relations with theoretical calculations demonstrates a good agreement, reflecting even several subtle features like band splitting, the second conduction band, and the overlaps between the first conduction and first valence band. Our study demonstrates that the cyclotron resonance experiments can be efficiently used to directly obtain the band structures of semimetallic 2D materials.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا