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تسجيل مستخدم جديدPredicting and Understanding Order of Heteroepitaxial Quantum Dots
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Lawrence H. Friedman
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Heteroepitaxial self-assembled quantum dots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth whereby a growing planar film becomes unstable after an initial wetting layer is formed. Common systems are Ge$_{x}$Si$_{1-x}$/Si and In$_{x}$Ga$_{1-x}$As/GaAs. For applications, SAQD arrays need to be ordered. The role of crystal anisotropy, random initial conditions and thermal fluctuations in influencing SAQD order during early stages of SAQD formation is studied through a simple stochastic model of surface diffusion. Surface diffusion is analyzed through a linear and perturbatively nonlinear analysis. The role of crystal anisotropy in enhancing SAQD order is elucidated. It is also found that SAQD order is enhanced when the deposited film is allowed to evolve at heights near the critical wetting surface height that marks the onset of non-planar film growth.
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Epitaxial self-assembled quantum dots (SAQDs) represent an important step in the advancement of semiconductor fabrication at the nanoscale that will allow breakthroughs in electronics and optoelectronics. In these applications, order is a key factor.
Here, the role of crystal anisotropy in promoting order during early stages of SAQD formation is studied through a linear analysis of a commonly used surface evolution model. Elastic anisotropy is used a specific example. It is found that there are two relevant and predictable correlation lengths. One of them is related to crystal anisotropy and is crucial for determining SAQD order. Furthermore, if a wetting potential is included in the model, it is found that SAQD order is enhanced when the deposited film is allowed to evolve at heights near the critical surface height for three-dimensional film growth.
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