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We propose deposition noise to be an important factor in unstable epitaxial growth of thin films. Our analysis yields a geometrical relation H=(RWL)^2 between the typical mound height W, mound size L, and the film thickness H. Simulations of realistic systems show that the parameter R is a characteristic of the growth conditions, and generally lies in the range 0.2-0.7. The constancy of R in late-stage coarsening yields a scaling relation between the coarsening exponent 1/z and the mound height exponent beta which, in the case of saturated mound slope, gives beta = 1/z = 1/4.
We have investigated a method for substituting oxygen with nitrogen in EuO thin films, which is based on molecular beam epitaxy distillation with NO gas as the oxidizer. By varying the NO gas pressure, we produce crystalline, epitaxial EuO_(1-x)N_x f
The interest in Fe-chalcogenide unconventional superconductors is intense after the critical temperature of FeSe was reported enhanced by more than one order of magnitude in the monolayer limit at the interface to an insulating oxide substrate. In he
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical propert
We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickn
A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic a