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We report on the transport, magnetization, and scanning tunneling spectroscopy measurements on c-axis oriented thin films of MgB2 irradiated with high energy heavy ions of uranium and gold. We find a slight shift in the irreversibility and upper critical field lines to higher temperatures after irradiation. In addition, we observe an increase in the critical current at high temperatures near Tc2 and only a small change at low temperatures. Furthermore, we find no evidence for the existence of anisotropic pinning induced by heavy ion irradiation in this material. Tunneling spectra in an irradiated sample show a double gap structure with a flat background and very low zero-bias conductance, behaving in much the same way as the pristine unirradiated sample.
We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-r
Temperature dependent optical conductivities and DC resistivity of c-axis oriented superconducting (Tc = 39.6 K) MgB2 films (~ 450 nm) have been measured. The normal state ab-plane optical conductivities can be described by the Drude model with a tem
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field
160 MeV Neon ion irradiation has been carried out on MgB2 polycrystalline pellets at various doses. There has not been any significant change in Tc except at the highest dose of 1x10^15 ions/cm^2. Increase in resistivity has been noticed. Resistivity
The London penetration depth was measured in optimally doped Ba0.6K0.4Fe2As2 crystals, with and without columnar defects produced by 1.4 GeV 208Pb irradiation. The low temperature behavior of unirradiated samples was consistent with a fully gapped su