ﻻ يوجد ملخص باللغة العربية
We carry out extensive direct path integral Monte Carlo (PIMC) simulations of the uniform electron gas (UEG) at finite temperature for different values of the spin-polarization $xi$. This allows us to unambiguously quantify the impact of spin-effects on the momentum distribution function $n(mathbf{k})$ and related properties. We find that interesting physical effects like the interaction-induced increase in the occupation of the zero-momentum state $n(mathbf{0})$ substantially depend on $xi$. Our results further advance the current understanding of the UEG as a fundamental model system, and are of practical relevance for the description of transport properties of warm dense matter in an external magnetic field. All PIMC results are freely available online and can be used as a benchmark for the development of new methods and applications.
We present extensive new textit{ab intio} path integral Monte Carlo results for the momentum distribution function $n(mathbf{k})$ of the uniform electron gas (UEG) in the warm dense matter (WDM) regime over a broad range of densities and temperatures
In a recent Letter [T.~Dornheim emph{et al.}, Phys.~Rev.~Lett.~textbf{125}, 085001 (2020)], we have presented the first emph{ab initio} results for the nonlinear density response of electrons in the warm dense matter regime. In the present work, we e
The uniform electron gas (UEG) at finite temperature has recently attracted substantial interest due to the epxerimental progress in the field of warm dense matter. To explain the experimental data accurate theoretical models for high density plasmas
The performance of open-system quantum annealing is adversely affected by thermal excitations out of the ground state. While the presence of energy gaps between the ground and excited states suppresses such excitations, error correction techniques ar
To use quantum systems for technological applications we first need to preserve their coherence for macroscopic timescales, even at finite temperature. Quantum error correction has made it possible to actively correct errors that affect a quantum mem