ترغب بنشر مسار تعليمي؟ اضغط هنا

Effect of uniaxial stress on the electronic band structure of NbP

107   0   0.0 ( 0 )
 نشر من قبل Clemens Schindler
 تاريخ النشر 2020
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The Weyl semimetal NbP exhibits a very small Fermi surface consisting of two electron and two hole pockets, whose fourfold degeneracy in $k$ space is tied to the rotational symmetry of the underlying tetragonal crystal lattice. By applying uniaxial stress, the crystal symmetry can be reduced, which successively leads to a degeneracy lifting of the Fermi-surface pockets. This is reflected by a splitting of the Shubnikov-de Haas frequencies when the magnetic field is aligned along the $c$ axis of the tetragonal lattice. In this study, we present the measurement of Shubnikov-de Haas oscillations of single-crystalline NbP samples under uniaxial tension, combined with state-of-the-art calculations of the electronic band structure. Our results show qualitative agreement between calculated and experimentally determined Shubnikov-de Haas frequencies, demonstrating the robustness of the band-structure calculations upon introducing strain. Furthermore, we predict a significant shift of the Weyl points with increasing uniaxial tension, allowing for an effective tuning to the Fermi level at only 0.8% of strain along the $a$ axis.



قيم البحث

اقرأ أيضاً

The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy . The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results revealing a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy in the annealed (Ga,Mn)As layers is interpreted as a result of the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the enhanced free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.
We present results of measurements of resistivity of CAS{} under the combination of $c$-axis magnetic field and in-plane uniaxial stress. In unstressed CAS{} there are two magnetic phases. The low-field A phase is a single-component spin-density wave (SDW), with $mathbf{q} = (eta, pm eta, 1/2)$, and the high-field B phase consists of microscopically coexisting $(eta, eta, 1/2)$ and $(eta, -eta, 1/2)$ spin-density waves. Pressure along a $langle 100 rangle$ lattice direction is a transverse field to both of these phases, and so initially has little effect, however eventually induces new low- and high-field phases in which the principal axes of the SDW components appear to have rotated to the $langle 100 rangle$ directions. Under this strong $langle 100 rangle$ compression, the field evolution of the resistivity is much smoother than at zero strain: In zero strain, there is a strong first-order transition, while under strong $langle 100 rangle$ it becomes much broader. We hypothesize that this is a consequence of the uniaxial stress lifting the degeneracy between the (100) and (010) directions.
The electronic structure of BaFe2As2 doped with Co, Ni, and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the dist ribution of Co, Ni, and Cu 3d states in the valence band. We conclude that the Co and Ni 3d states provide additional free carriers to the Fermi level, while the Cu 3d states are found at the bottom of the valence band in a localized 3d10 shell. These findings help shed light on why superconductivity can occur in BaFe2As2 doped with Co and Ni but not Cu.
Using angle-resolved photoemission spectroscopy, we show the direct evidence of charge transfer between adsorbed molecules and metal substrate, i.e. chemisorption of CO on Pt(111) and Pt-Sn/Pt(111) 2x2 surfaces. The observed band structure shows a un ique signature of charge transfer as CO atoms are adsorbed,revealing the roles of specific orbital characters participating in the chemisorption process. As the coverage of CO increases, the degree of charge transfer between CO and Pt shows clear difference to that of Pt-Sn. With comparison to DFT calculation results, the observed distinct features in the band structure are interpreted as backdonation bonding states of Pt molecular orbital to the 2{pi} orbital of CO. Furthermore, the change in the surface charge concentration, measured from the Fermi surface area, shows Pt surface has a larger charge concentration change than Pt-Sn surface upon CO adsorption. The difference in the charge concentration change between Pt and Pt-Sn surfaces reflects the degree of electronic effects during CO adsorption on Pt-Sn.
We derive a general relation between the fine structure splitting (FSS) and the exciton polarization angle of self-assembled quantum dots (QDs) under uniaxial stress. We show that the FSS lower bound under external stress can be predicted by the exci ton polarization angle and FSS under zero stress. The critical stress can also be determined by monitoring the change in exciton polarization angle. We confirm the theory by performing atomistic pseudopotential calculations for the InAs/GaAs QDs. The work provides a deep insight into the dots asymmetry and their optical properties, and a useful guide in selecting QDs with smallest FSS which are crucial in entangled photon sources applications.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا