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A mechanical equivalent system is introduced to mimic the behavior of multilayer structures with diffusive spin transport. The analogy allows one to use existing mechanical intuition to predict the influence of various parameters on spin torques and spin-dependent magnetoresistance. In particular, it provides an understanding of the sign-changing behavior of spin torque in asymmetric F/N/F spin valves. It further helps to uncover the physical reason behind the singular behavior of spin magnetoresistance in devices with ultra-thin N-layers.
The influence of an asymmetric in-plane magnetic anisotropy on the thermally activated spin current is studied theoretically for two different systems; (i) the system consisting of a ferromagnetic insulator in a direct contact with a nonmagnetic meta
We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a sli
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with thin (2-3 atomic layers) and thick (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advanta
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of
Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillators frequency stability. This work addresses the low offset frequency flicker noise of a