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We report on a quasi-nondegenerate pump-probe technique that is based on spectral-filtration of femtosecond laser pulses by a pair of mutually-spectrally-disjunctive interference filters. This cost- and space-efficient approach can be used even in pump-probe microscopy where collinear propagation of pump and probe pulses is dictated by utilization of a microscopic objective. This technique solves the contradictory requirements on an efficient removal of pump photons from the probe beam, to achieve a good signal-to-noise ratio, simultaneously with a needed spectral proximity of the excitation and probing, which is essential for magnetooptical study of many material systems. Importantly, this spectral-filtration of 100 fs long laser pulses does not affect considerably the resulting time-resolution, which remains well below 500 fs. We demonstrate the practical applicability of this technique with close but distinct wavelengths of pump and probe pulses in spatially- and time-resolved spin-sensitive magnetooptical Kerr effect (MOKE) experiment in GaAs/AlGaAs heterostructure, where a high-mobility spin system is formed after optical injection of electrons at wavelengths close to MOKE resonance. In particular, we studied the time- and spatial-evolutions of charge-related (reflectivity) and spin-related (MOKE) signals. We revealed that they evolve in a similar but not exactly the same way which we attributed to interplay of several electron many-body effects in GaAs.
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of contin
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead
We compare the observed strong saturation of the free carrier absorption in n-type semiconductors at 300 K in the terahertz frequency range when single-cycle pulses with intensities up to 150 MW/cm2 are used. In the case of germanium, a small increas
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current change
We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combin