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Field-dependent magnetic structure of a layered Dirac material EuMnBi$_2$ was investigated in detail by the single crystal neutron diffraction and the resonant x-ray magnetic diffraction techniques. On the basis of the reflection conditions in the antiferromagnetic phase at zero field, the Eu moments were found to be ordered ferromagnetically within the $ab$ plane and stacked antiferromagnetically along the $c$ axis in the sequence of up-up-down-down. Upon the spin-flop transition under the magnetic field parallel to the $c$ axis, the Eu moments are reoriented from the $c$ to the $a$ or $b$ directions forming two kinds of spin-flop domains, whereas the antiferromagnetic structure of the Mn sublattice remains intact as revealed by the quantitative analysis of the change in the neutron diffraction intensities. The present study provides a concrete basis to discuss the dominant role of the Eu sublattice on the enhanced two-dimensionality of the Dirac fermion transport in EuMnBi$_2$.
The magnetic structure of the nonmetallic metal FeCrAs, a compound with the characters of both metals and insulators, was examined as a function of temperature using single-crystal neutron diffraction. The magnetic propagation vector was found to be
Dirac/Weyl semimetals hosting linearly-dispersing bands have received recent attention for potential thermoelectric applications, since their ultrahigh-mobility carriers could generate large thermoelectric and Nernst power factors. To optimize these
By means of circularly polarized x-ray beam at Dy L3 and Fe K absorption edges, the chiral structure of the electric quadrupole was investigated for a single crystal of DyFe3(BO3)4 in which both Dy and Fe ions are arranged in spiral manners. The inte
We have studied the magnetic ordering in Na doped BaFe$_2$As$_2$ by unpolarized and polarized neutron diffraction using single crystals. Unlike previously studied FeAs-based compounds that magnetically order, Ba$_{1-x}$Na$_x$Fe$_2$As$_2$ exhibits two
The hidden order phase in URu$_2$Si$_2$ is highly sensitive to electronic doping. A special interest in silicon-to-phosphorus substitution is due to the fact that it may allow one, in part, to isolate the effects of tuning the chemical potential from