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We study the phase diagram of the interacting two-dimensional electron gas (2DEG) with equal Rashba and Dresselhaus spin-orbit coupling, which for weak coupling gives rise to the well-known persistent spin-helix phase. We construct the full Hartree-Fock phase diagram using a classical Monte-Carlo method analogous to that used in Phys.Rev.B 96, 235425 (2017). For the 2DEG with only Rashba spin-orbit coupling, it was found that at intermediate values of the Wigner-Seitz radius rs the system is characterized by a single Fermi surface with an out-of-plane spin polarization, while at slightly larger values of rs it undergoes a transition to a state with a shifted Fermi surface and an in-plane spin polarization. The various phase transitions are first-order, and this shows up in discontinuities in the conductivity and the appearance of anisotropic resistance in the in-plane polarized phase. In this work, we show that the out-of-plane spin-polarized region shrinks as the strength of the Dresselhaus spin-orbit interaction increases, and entirely vanishes when the Rashba and Dresselhaus spin-orbit coupling strengths are equal. At this point, the system can be mapped onto a 2DEG without spin-orbit coupling, and this transformation reveals the existence of an in-plane spin-polarized phase with a single, displaced Fermi surface beyond rs > 2.01. This is confirmed by classical Monte-Carlo simulations. We discuss experimental observation and useful applications of the novel phase, as well as caveats of using the classical Monte-Carlo method.
We study the lifetime of the persistent spin helix in semiconductor quantum wells with equal Rashba- and linear Dresselhaus spin-orbit interactions. In order to address the temperature dependence of the relevant spin relaxation mechanisms we derive a
We theoretically study the profile of a supercurrent in two-dimensional Josephson junctions with Rashba-Dresselhaus spin-orbit interaction (RDSOI) in the presence of a Zeeman field. Through investigating self-biased supercurrent (so called $varphi_0$
In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate
We experimentally investigate the dynamics of a persistent spin helix in etched GaAs wire structures of 2 to 80 um width. Using magneto-optical Kerr rotation with high spatial resolution, we determine the lifetime of the spin helix. A few nanoseconds
The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed using the