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We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be design
We demonstrate how gradient ascent pulse engineering optimal control methods can be implemented on donor electron spin qubits in Si semiconductors with an architecture complementary to the original Kanes proposal. We focus on the high-fidelity contro
By merging bottom-up and top-down strategies we tailor graphenes electronic properties within nanometer accuracy, which opens up the possibility to design optical and plasmonic circuitries at will. In a first step, graphene electronic properties are
Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlle