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Silicon nitride based photonic integrated circuits offer a wavelength operation window in the near infrared down to visible light, which makes them attractive for life science applications. However, they exhibit significantly different behavior in comparison with better-established silicon on insulator counterparts due to the lower index contrast. Among the most important building blocks in photonic integrated circuits are broadband couplers with a defined coupling ratio. We present silicon nitride broadband asymmetric directional coupler designs with 50/50 and 90/10 splitting ratios with a central wavelength of 840 nm for both TE- and TM-like polarization. We show that silicon nitride broadband asymmetric directional couplers can be designed accurately in a time efficient way by using a general implementation of the coupled mode theory. The accuracy of the coupled mode theory approach is validated with finite difference time domain simulations and confirmed with measurements of four coupler configurations.
Broadband low loss and ultra-low crosstalk waveguide crossings are a crucial component for photonic integrated circuits to allow a higher integration density of functional components and an increased flexibility in the layout. We report the design of
We show that a nonlinear asymmetric directional coupler composed of a linear waveguide and a nonlinear waveguide operating by nondegenerate parametric amplification is an effective source of single-mode squeezed light. This is has been demonstrated,
An optical equivalent of the field-programmable gate array (FPGA) is of great interest to large-scale photonic integrated circuits. Previous programmable photonic devices relying on the weak, volatile thermo-optic or electro-optic effect usually suff
We report on an on-chip routing device for propagating condensates of exciton-polaritons. This counterdirectional coupler implements signal control by a photonic microdisk potential, which couples two lithographically defined waveguides and reverses
A tunable directional coupler based on Coulomb Blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on single GaAs/AlGaAs heterojunctio