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Recently, a honeycomb borophene was reported to grow successfully on Al(111) surface. Since the metallic $sigma$-bonding bands of honeycomb boron sheet play a crucial role in the 39 K superconductivity of MgB$_2$, it is physically interesting to examine whether similar property exists in this material. We have calculated the electronic structures and the electron-phonon coupling for honeycomb borophene by explicitly considering the substrate effect using first-principles density functional theory in conjunction with the Wannier interpolation technique. We find that the $sp^2$-hybridized $sigma$-bonding bands of honeycomb borophene are metallized due to moderate charge transfer from the Al substrate, similar as in MgB$_2$. However, the electron-phonon coupling in honeycomb borophene is much weaker than in MgB$_2$ due to the hardening of the bond-stretching boron phonon modes and the reduction of phonon density of states. Nevertheless, the interlayer coupling between Al-associated phonons and electrons in borophene is strong. Based on this observation, we predict that a 6.5 K superconducting transition can be observed in a free-standing borophene decorated by a single Al layer, namely monolayer AlB$_2$. Accordingly, similar superconducting transition temperature could be expected in honeycomb borophene on Al(111).
We present a combined experimental and theoretical study of the surface vibrational modes of the topological insulator (TI) Bi$_2$Se$_3$ with particular emphasis on the low-energy region below 10 meV that has been difficult to resolve experimentally.
We combine electron beam lithography and masked anodization of epitaxial aluminium to define tunnel junctions via selective oxidation, alleviating the need for wet-etch processing or direct deposition of dielectric materials. Applying this technique
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