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We demonstrate that phase-difference between terahertz signals on the source and drain of a field effect transistor (a TeraFET) induces a plasmon-assisted dc current, which is dramatically enhanced in vicinity of plasmonic resonances. We describe a TeraFET operation with identical amplitudes of radiation on source and drain antennas but with a phase-shift-induced asymmetry. In this regime, the TeraFET operates as a tunable resonant polarization-sensitive plasmonic spectrometer operating in the sub-terahertz and terahertz range of frequencies. We also propose an effective scheme of a phase-sensitive homodyne detector operating in a phase-asymmetry mode, which allows for a dramatic enhancement of the response. These regimes can be implemented in different materials systems including silicon. The p-diamond TeraFETs could support operation in the 200 to 600 GHz atmospheric windows.
We develop a theory of the helicity driven nolinear dc response of gated two-dimensional electron gas to the terahertz radiation. We demonstrate that the helicity-sensitive part of the response dramatically increases in the vicinity of the plasmonic
Quantum dots optically excited in close proximity to a silver nanowire can launch nanowire surface plasmons. The challenge related to this promising hybrid system is to control the position of nanoemitters on the nanowire. We report on the use of two
Using a dual-mode STM-AFM microscope operating below 50mK we measured the Local Density of States (LDoS) along small normal wires connected at both ends to superconductors with different phases. We observe that a uniform minigap can develop in the wh
Acoustic vibrations at the nanoscale (GHz-THz frequencies) and their interactions with electrons, photons and other excitations are the heart of an emerging field in physics: nanophononics. The design of ultrahigh frequency acoustic-phonon transducer
We discuss how a single Cooper-pair transistor may be used to detect the superconducting phase difference by using the phase dependence of the input capacitance from gate to the ground. The proposed device has a low power dissipation because its oper