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Designing platforms to control phase-coherence and interference of electron waves is a cornerstone for future quantum electronics, computing or sensing. Nanoporous graphene (NPG) consisting of linked graphene nanoribbons has recently been fabricated using molecular precursors and bottom-up assembly [Moreno et al., Science 360, 199 (2018)] opening an avenue for controlling the electronic current in a two-dimensional material. By simulating electron transport in real-sized NPG samples we predict that electron waves injected from the tip of a scanning tunneling microscope (STM) behave similarly to photons in coupled waveguides, displaying a Talbot interference pattern. We link the origins of this effect to the band structure of the NPG and further demonstrate how this pattern may be mapped out by a second STM probe. We enable atomistic parameter-free calculations beyond the 100 nm scale by developing a new multi-scale method where first-principles density functional theory regions are seamlessly embedded into a large-scale tight-binding.
Bottom-up prepared carbon nanostructures appear as promising platforms for future carbon-based nanoelectronics, due to their atomically precise and versatile structure. An important breakthrough is the recent preparation of nanoporous graphene (NPG)
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific contact resist
The Talbot effect has been known in optics since XIX century and found various technological applications. In this paper, we demonstrate with the help of micromagnetic simulations this self-imaging phenomenon for spin waves propagating in a thin ferr
Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of ca
In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source voltage VDS s