ترغب بنشر مسار تعليمي؟ اضغط هنا

Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals

64   0   0.0 ( 0 )
 نشر من قبل Ludmila Szulakowska
 تاريخ النشر 2018
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We describe here recent work on the electronic properties, magnetoexcitons and valley polarised electron gas in 2D crystals. Among 2D crystals, monolayer $MoS_2$ has attracted significant attention as a direct-gap 2D semiconductor analogue of graphene. The crystal structure of monolayer $MoS_2$ breaks inversion symmetry and results in K valley selection rules allowing to address individual valleys optically. Additionally, the band nesting near Q points is responsible for enhancing the optical response of $MoS_2$.We show that at low energies the electronic structure of $MoS_2$ is well approximated by the massive Dirac Fermion model. We focus on the effect of magnetic field on optical properties of $MoS_2$. We discuss the Landau level structure of massive Dirac fermions in the two non-equivalent valleys and resulting valley Zeeman splitting. The effects of electron-electron interaction on the valley Zeeman splitting and on the magneto-exciton spectrum are described. We show the changes in the absorption spectrum as the self-energy, electron-hole exchange and correlation effects are included. Finally, we describe the valley-polarised electron gas in $WS_2$ and its optical signature in finite magnetic fields.



قيم البحث

اقرأ أيضاً

We show how the trigonal warping effect in doped graphene can be used to produce fully valley polarized currents. We propose a device that acts both as a beam splitter and a collimator of these electronic currents. The result is demonstrated trough a n optical analogy using two dimensional photonic crystals.
Semiconductor interfaces, such as these existing in multilayer structures (e.g., quantum wells (QWs)), are interesting because of their ability to form 2D electron gases (2DEGs), in which charge carriers behave completely differently than they do in the bulk. As an example, in the presence of a strong magnetic field, the Landau quantization of electronic levels in the 2DEG results in the quantum Hall effect (QHE), in which Hall conductance is quantized. This chapter is devoted to the properties of such 2DEGs in multilayer structures made of compound semiconductors belonging to the class of Se- and Te-based chalcogenides. In particular, we will also discuss the interesting question of how the QHE phenomenon is affected by the giant Zeeman splitting characteristic of II-VI-based diluted magnetic semiconductors (DMSs), especially when the Zeeman splitting and Landau splitting become comparable. We will also shortly discuss novel topological phases in chalcogenide multilayers.
The dynamical and nonlocal dielectric function of a two-dimensional electron gas (2DEG) with finite energy bandwidth is computed within random-phase approximation. For large bandwidth, the plasmon dispersion has two separate branches at small and lar ge momenta. The large momenta branch exhibits negative quasi-flat dispersion. The two branches merge with decreasing bandwidth. We discuss how the maximum energy plasmon mode which resides at energies larger than all particle-hole continuum can potentially open a route to low-loss plasmons. Moreover, we discuss the bandwidth effects on the static screening of the charged and magnetic impurities.
Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magnet o-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate valley-reversible Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantiz
We show that the optical excitation of graphene with polarized light leads to the pure valley current where carriers in the valleys counterflow. The current in each valley originates from asymmetry of optical transitions and electron scattering by im purities owing to the warping of electron energy spectrum. The valley current has strong polarization dependence, its direction is opposite for normally incident beams of orthogonal linear polarizations. In undoped graphene on a substrate with high susceptibility, electron-electron scattering leads to an additional contribution to the valley current that can dominate.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا